Technology development challenges for advanced group IV semiconductor devices

2016 ◽  
Vol 213 (11) ◽  
pp. 2820-2833 ◽  
Author(s):  
Cor Claeys ◽  
Hiro Arimura ◽  
Nadine Collaert ◽  
Jerome Mitard ◽  
Rita Rooyackers ◽  
...  
Keyword(s):  
Technology Development ◽  
Semiconductor Devices ◽  
Group Iv ◽  
Group Iv Semiconductor

Structural and Electrical Properties of Tin and Carbon Co-Implanted Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
P. Mei ◽  
M. T. Schmidt ◽  
P. W. Li ◽  
E. S. Yang ◽  
B. J. Wilkens
Keyword(s):  
Electrical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Alloy System ◽  
Group Iv ◽  
Carbon Ions ◽  
Depth Profiles ◽  
Structural And Electrical Properties ◽  
Group Iv Semiconductor ◽  
Work Samples ◽  
Secondary Ion

AbstractThe alloy system Six(SnyC1-y)1-x was investigated. In this work, samples were prepared by co-implantation of tin and carbon ions into silicon wafers with dosage range 1015 − 1016cm−2, followed by rapid thermal annealing. Rutherford backscattering channeling, Auger sputter profiling, and secondary ion mass spectrometry were employed to study the crystallinity, chemical composition and depth profiles. A near perfect crystallinity for 0.5% at. of tin and carbon was achieved. To study the electrical properties in the implanted materials, diode I-V measurements were performed. The data show near ideal p-n junctions in the co-implanted region. This work demonstrates promising features of group IV semiconductor synthesis by ion implantation.

scholarly journals Raman spectrum of group IV nanowires: influence of temperature

2011 ◽  
Vol 1305 ◽  
Author(s):  
J. Anaya ◽  
C. Prieto ◽  
J. Souto ◽  
J. Jiménez ◽  
A. Rodríguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Laser Beam ◽  
Semiconductor Nanowires ◽  
Group Iv ◽  
Experimental Conditions ◽  
Influence Of Temperature ◽  
Spectrum Of Group ◽  
Group Iv Semiconductor ◽  
Heat Transport Equation

ABSTRACTGroup IV semiconductor nanowires are characterized by Raman spectroscopy. The results are analyzed in terms of the heating induced by the laser beam on the nanowires. By solving the heat transport equation one can simulate the temperature reached by the NWs under the exposure to a laser beam. The results are illustrated with Si and Si1-xGex nanowires. Both bundles of nanowires and individual nanowires are studied. The main experimental conditions contributing to the nanowire heating are discussed.

Valence Band Properties of Relaxed Ternary Group IV Semiconductor Alloys

2000 ◽  
Vol 39 (S1) ◽  
pp. 244
Author(s):  
Chung-Yi Lin ◽  
Cheewee Liu ◽  
Wei-Zhu Chen
Keyword(s):  
Valence Band ◽  
Group Iv ◽  
Semiconductor Alloys ◽  
Group Iv Semiconductor

Magnetic Properties of Epitaxial Fe3Si/Ge(111) Layers for Group-IV Semiconductor Spintronic Applications

2008 ◽  
Author(s):  
Y. Ando ◽  
K. Kasahara ◽  
K. Ueda ◽  
K. Hamaya ◽  
Y. Nozaki ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Group Iv ◽  
Group Iv Semiconductor
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