Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires

2016 ◽  
Vol 213 (11) ◽  
pp. 2890-2894 ◽  
Author(s):  
B. Le Borgne ◽  
L. Pichon ◽  
M. Thomas ◽  
A. C. Salaün
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon ◽  
Surface States

scholarly journals Single-electron effects in heavily doped polycrystalline silicon nanowires

1998 ◽  
Vol 73 (8) ◽  
pp. 1113-1115 ◽  
Author(s):  
Andrew C. Irvine ◽  
Zahid A. K. Durrani ◽  
Haroon Ahmed ◽  
Serge Biesemans
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon ◽  
Single Electron ◽  
Heavily Doped ◽  
Electron Effects

Water passivation effect on polycrystalline silicon nanowires

2007 ◽  
Vol 91 (20) ◽  
pp. 202113 ◽  
Author(s):  
Horng-Chih Lin ◽  
Chun-Jung Su ◽  
Cheng-Yun Hsiao ◽  
Yuh-Shyong Yang ◽  
Tiao-Yuan Huang
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon

Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition

2011 ◽  
Vol 257 (9) ◽  
pp. 3861-3866 ◽  
Author(s):  
Xianzhong Sun ◽  
Ran Tao ◽  
Linhan Lin ◽  
Zhengcao Li ◽  
Zhengjun Zhang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Polycrystalline Silicon ◽  
Electroless Deposition ◽  
Fabrication And Characterization

scholarly journals Engineering Porous Silicon Nanowires with Tuneable Electronic Properties

2020 ◽  
Vol 5 (4) ◽  
pp. 57
Author(s):  
S. Javad Rezvani ◽  
Nicola Pinto ◽  
Roberto Gunnella ◽  
Alessandro D’Elia ◽  
Augusto Marcelli ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Nanowires ◽  
Surface States ◽  
Internal Surface ◽  
Synthesis Process ◽  
Spectroscopic Techniques ◽  
Semiconducting Nanowires ◽  
Distinct Structure ◽  
Structural And Electronic Properties ◽  
Porous Silicon Nanowires

Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs.

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