Impact of transparent conductive oxide front side texture on the open-circuit voltage of a-Si:H solar cells

2016 ◽  
Vol 213 (7) ◽  
pp. 1942-1948
Author(s):  
Chao Zhang ◽  
Tsvetelina Merdzhanova ◽  
Matthias Meier ◽  
Nicolas Sommer ◽  
Oleksandr Astakhov
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Front Side ◽  
Conductive Oxide

scholarly journals Au/Cu2Te/CdTe/CdS/TCO/Glass Solar Cells withCdIn2O4Obtained by Sol-Gel as TCO

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
J. Márquez Marín ◽  
G. Torres Delgado ◽  
M. A. Aguilar Frutis ◽  
R. Castanedo Pérez ◽  
O. Zelaya Ángel
Keyword(s):  
Solar Cells ◽  
Thermal Activation ◽  
Open Circuit Voltage ◽  
Sol Gel ◽  
Transparent Conductive Oxide ◽  
Cdte Layer ◽  
Open Circuit ◽  
Conductive Oxide ◽  
Systematic Optimization ◽  
Gel Technique

An Au/Cu2Te/CdTe/CdS/TCO/glass heterostructure based superstrate solar cells with 2.5 mm2of area, where the CdTe layer was prepared by means of closed spaced sublimation (CSS) and the CdS by chemical bath, reached an efficiencyηvalue of 12.1%. As transparent conductive oxide (TCO), a thin film of cadmium-indium oxide (CdIn2O4:CIO), obtained by sol-gel technique, was used. A systematic optimization of the thermal activation of the CdTe/CdS/CIO central part of the device with a CdCl2vapor ambient made the conversion efficiency of the Au/Cu2Te/CdTe/CdS/CIO/glass heterostructure reaches 9.94% for the CdTe layer with thickness of 1.8 μm. This efficiency was reached only through an open circuit voltageVOCoptimization. A maximumηof 12.1% was reached with the established procedure of optimization and when the CdTe layer thickness was increased to 3.1 ± 0.05 μm. The substitution of CIO by commercial ITO provoked in the cell a decrease ofηfrom 12.1% to 7.2%, both devices prepared under the same conditions. Starting from these results, we can say that CIO was a better TCO than commercial ITO in our solar cell, with the advantage that CIO was obtained by sol-gel, which is a simple and economical technique.

Effects of Silicon:Carbon P+ Layer Interfaces on Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
F. R. Jeffrey ◽  
G. D. Vernstrom ◽  
M. F. Weber ◽  
J. R. Gilbert
Keyword(s):  
Open Circuit Voltage ◽  
Series Resistance ◽  
Photovoltaic Performance ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Electron Current ◽  
Potential Source ◽  
Conductive Oxide ◽  
Abrupt Interface ◽  
High Series

AbstractResults are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from O.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

Importance of interfacial crystallinity to reduce open-circuit voltage loss in organic solar cells

2019 ◽  
Vol 115 (15) ◽  
pp. 153301 ◽  
Author(s):  
Seiichiro Izawa ◽  
Naoto Shintaku ◽  
Mitsuru Kikuchi ◽  
Masahiro Hiramoto
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Loss

scholarly journals Subphthalocyanine‐Diketopyrrolopyrrole Conjugates: 3D Star‐Shaped Systems as Non‐Fullerene Acceptors in Polymer Solar Cells with High Open‐Circuit Voltage

ChemPlusChem ◽  
2021 ◽  
Author(s):  
Maria J. Álvaro‐Martins ◽  
José G. Sánchez ◽  
Giulia Lavarda ◽  
Desiré Molina ◽  
Josep Pallarès ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Open Circuit
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