scholarly journals Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

2015 ◽  
Vol 213 (2) ◽  
pp. 470-480 ◽  
Author(s):  
Loïc Baggetto ◽  
Cédric Charvillat ◽  
Yannick Thébault ◽  
Jérôme Esvan ◽  
Marie-Christine Lafont ◽  
...  
2015 ◽  
Vol 159 ◽  
pp. 325-332 ◽  
Author(s):  
Artak Karapetyan ◽  
Anna Reymers ◽  
Suzanne Giorgio ◽  
Carole Fauquet ◽  
Laszlo Sajti ◽  
...  

Molecules ◽  
2012 ◽  
Vol 17 (5) ◽  
pp. 5021-5029 ◽  
Author(s):  
Mohammad Reza Khanlary ◽  
Vahid Vahedi ◽  
Ali Reyhani

1987 ◽  
Vol 55 (2) ◽  
pp. 309-309 ◽  
Author(s):  
F. Rochet ◽  
S. Rigo ◽  
M. Froment ◽  
C. d'Anterroches ◽  
C. Maillot ◽  
...  

2008 ◽  
Vol 255 (5) ◽  
pp. 2665-2670 ◽  
Author(s):  
C. Danţuş ◽  
G.G. Rusu ◽  
M. Dobromir ◽  
M. Rusu

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.


2013 ◽  
Vol 770 ◽  
pp. 225-228
Author(s):  
L. Uttayan ◽  
K. Aiempanakit ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
V. Pattantsetakul ◽  
...  

Titanium dioxide (TiO2) films were prepared by thermal oxidation from Ti films. The Ti films were deposited on glass and silicon (100) wafer substrate by dc magnetron sputtering and subsequent with thermal oxidation process. The crystal structure and morphology of TiO2 films were estimated by using X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The optical property of TiO2 films was determined by UV-Visible spectrophotometer. The influences of annealing temperature between 200 to 500°C in air for 1 hour on the structure and optical properties of TiO2 films were investigated. The increasing of annealing temperature was directly affected the phase transition from Ti to TiO2. The optical and structural properties of TiO2 films are the best exhibited with increasing the annealing temperature at 500 °C.


3 Biotech ◽  
2016 ◽  
Vol 6 (2) ◽  
Author(s):  
Snigdha Sajeendra Babu ◽  
Shiji Mathew ◽  
Nandakumar Kalarikkal ◽  
Sabu Thomas ◽  
Radhakrishnan E. K

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