Temperature-dependent optical, spectral, and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes

2015 ◽  
Vol 213 (1) ◽  
pp. 46-51 ◽  
Author(s):  
Soo Hyun Lee ◽  
Xiang-Yu Guan ◽  
Soo-Kun Jeon ◽  
Jae Su Yu
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Temperature dependent carrier localization in AlGaInN near-ultraviolet light-emitting diodes

2016 ◽  
Vol 24 (11) ◽  
pp. 11594 ◽  
Author(s):  
Hongwei Wang ◽  
Yue Lin ◽  
Lihong Zhu ◽  
Yijun Lu ◽  
Yi Tu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Carrier Localization ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes

2012 ◽  
Vol 101 (25) ◽  
pp. 253512 ◽  
Author(s):  
Craig G. Moe ◽  
Gregory A. Garrett ◽  
Paul Rotella ◽  
Hongen Shen ◽  
Michael Wraback ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
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