Anomalous temperature dependence of the open-circuit voltage of InxSy-buffered Cu(In,Ga)(Se,S)2 solar cells simulated in broad temperature range

2015 ◽  
Vol 213 (5) ◽  
pp. 1276-1283 ◽  
Author(s):  
Christian Schubbert ◽  
Patrick Eraerds ◽  
Michael Richter ◽  
Jürgen Parisi ◽  
Ingo Riedel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Broad Temperature Range ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Temperature Range

Temperature dependence of HOMO-LUMO levels and open circuit voltage for P3HT:PCBM organic solar cells

2011 ◽  
Vol 1360 ◽  
Author(s):  
Yang Shen ◽  
Louis Scudiero ◽  
Mool C. Gupta
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Temperature Dependence ◽  
Organic Solar Cells ◽  
Photoelectron Spectroscopy ◽  
Open Circuit Voltage ◽  
Bulk Heterojunction ◽  
Acid Methyl Ester ◽  
Open Circuit ◽  
Temperature Range

ABSTRACTIn this study, the open circuit voltage (VOC) of poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) bulk heterojunction (BHJ) organic solar cells was measured at temperatures ranging from 300 K to 400 K. The temperature dependence of the vacuum shift and of the highest occupied molecular orbital (HOMO) energy level of P3HT and PCBM were measured by ultraviolet photoelectron spectroscopy (UPS) in the same temperature range. The temperature dependence of the absorption edge was also studied in the same temperature range to obtain the temperature variation of the optical band gap energy (Eg). The measured VOC of the devices showed a clear decreasing trend with increasing operating temperature and the total decrease was found to be about 0.1 V. Although the origin of VOC is still not fully understood it is generally believed that the energy level offset between the HOMO of the donor and the LUMO of the acceptor minus the exciton binding energy (0.3 eV) directly determines the value of VOC. However, by utilizing the measured values of the HOMO for the P3HT (donor) and of the LUMO for the PCBM (acceptor), we have found that the calculated values of VOC and its temperature dependence do not agree with the measured VOC values. This indicates that factors other than the offset between the HOMO of the donor and the LUMO of the acceptor materials are impacting VOC.

Temperature dependence of open-circuit voltage and recombination processes in polymer–fullerene based solar cells

2011 ◽  
Vol 95 (8) ◽  
pp. 2131-2135 ◽  
Author(s):  
Anil K. Thakur ◽  
Guillaume Wantz ◽  
Germà Garcia-Belmonte ◽  
Juan Bisquert ◽  
Lionel Hirsch
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Recombination Processes

scholarly journals Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Zhu ◽  
J. Yang ◽  
W. Wang ◽  
E. A. Schiff ◽  
J. Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Power Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Drift Mobility ◽  
Silicon Solar Cells ◽  
Solar Conversion ◽  
Conversion Efficiencies

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

Solar cells: A laboratory experiment on the temperature dependence of the open‐circuit voltage

1984 ◽  
Vol 52 (5) ◽  
pp. 449-451 ◽  
Author(s):  
A. Khoury ◽  
J‐P. Charles ◽  
J. Charette ◽  
M. Fieux ◽  
P. Mialhe
Keyword(s):  
Solar Cells ◽  
Laboratory Experiment ◽  
Temperature Dependence ◽  
Open Circuit Voltage ◽  
Open Circuit

Temperature and Light Intensity Dependences of Open Circuit Voltage in a-Si: H Pin Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Jin Jang ◽  
Choochon Lee
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Quality Factor ◽  
Open Circuit Voltage ◽  
Incident Light ◽  
Open Circuit ◽  
Dielectric Relaxation Time ◽  
Strong Temperature Dependence ◽  
Open Circuit Voltages

ABSTRACTThe temperature and incident light intensity dependences of open circuit voltage for hetero-and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from -2.40 to -2.67 mV/°C as the illumination intensity is decreased from 150 to 7mW/cm2 This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values(l.6–3.0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1.5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

Sign in / Sign up

Export Citation Format

Share Document