Excellent R
off
/R
on
ratio and short programming time in Cu/Al2
O3
-based conductive-bridging RAM under low-current (10 μA) operation
2015 ◽
Vol 213
(2)
◽
pp. 302-305
◽
Keyword(s):
2015 ◽
Vol 62
(3)
◽
pp. 805-813
◽
2001 ◽
Vol 36
(8)
◽
pp. 1286-1290
◽
1976 ◽
Vol 2
(4)
◽
pp. 591-598
◽
Keyword(s):
1996 ◽
Keyword(s):
2012 ◽
Vol 490-495
◽
pp. 7-12
2013 ◽
Vol 231
(3)
◽
pp. 557-566
◽