Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

2015 ◽  
Vol 212 (8) ◽  
pp. 1795-1799 ◽  
Author(s):  
Shuo Li ◽  
Yameng Bao ◽  
Mikko Laitinen ◽  
Timo Sajavaara ◽  
Matti Putkonen ◽  
...  
2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 97720-97727 ◽  
Author(s):  
Rajbir Singh ◽  
Vandana Vandana ◽  
Jagannath Panigrahi ◽  
P. K. Singh

Plasma assisted ALD deposited hafnium oxide films are studied for silicon surface passivation. SRV < 40 cm s−1 are realized under optimised conditions.


2013 ◽  
Vol 113 (2) ◽  
pp. 024509 ◽  
Author(s):  
Baochen Liao ◽  
Rolf Stangl ◽  
Thomas Mueller ◽  
Fen Lin ◽  
Charanjit S. Bhatia ◽  
...  

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