Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3
2015 ◽
Vol 212
(8)
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pp. 1795-1799
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2015 ◽
Vol 357
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pp. 635-642
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Keyword(s):
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2020 ◽
Vol 106
◽
pp. 104777
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Keyword(s):
2017 ◽
Vol 3
(6)
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pp. 1600491
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