scholarly journals Domain matching epitaxy of cubic In2O3onr-plane sapphire

2015 ◽  
Vol 212 (7) ◽  
pp. 1433-1439 ◽  
Author(s):  
Patrick Vogt ◽  
Achim Trampert ◽  
Manfred Ramsteiner ◽  
Oliver Bierwagen
Keyword(s):  
Domain Matching Epitaxy

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Domain matching epitaxy stabilized metastable, tetragonal BiFeO3 on symmetry-mismatched c-plane ZnO

2021 ◽  
Author(s):  
Yajuan Zhao ◽  
Zhigang Yin ◽  
Xingxing Li ◽  
Maoyuan Zheng ◽  
Yong Cheng ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Lattice Mismatch ◽  
Rhombohedral Phase ◽  
Tetragonal Symmetry ◽  
Formula Unit ◽  
Monoclinic Structure ◽  
X Ray ◽  
Oxide Electronics ◽  
Domain Matching Epitaxy ◽  
Bifeo3 Film

Abstract We report the stabilization of metastable tetragonal BiFeO3 epilayer on ZnO(0001) surface. X-ray reciprocal space map characterizations show that the BiFeO3 film is of true tetragonal symmetry, but not the commonly observed monoclinic structure. The critical thickness of the tetragonal BiFeO3 is higher than 140 nm, much larger than that reported previously. Despite the considerable lattice mismatch and symmetry mismatch, tetragonal BiFeO3 can be formed on ZnO(0001) though domain matching epitaxy which is featured by anisotropic growth. We show that by taking into account the elastic energy during the initial semi-coherent growth, the tetragonal phase is lower than the thermally stable rhombohedral phase in total energy by 70 meV per formula unit. Moreover, local piezoelectric characterizations reveal a coercive field of 360 kV/cm and a piezoelectric constant of 48 pm/V. The integration of tetragonal BiFeO3 with robust ferroelectricity on the platform of ZnO has potentials for all-oxide electronics applications.

Domain matching epitaxy of GaN films on a novel langasite substrate: an in-plane epitaxial relationship analysis

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4455-4461 ◽  
Author(s):  
Byung-Guon Park ◽  
R. Saravana Kumar ◽  
Moon-Deock Kim ◽  
Hak-Dong Cho ◽  
Tae-Won Kang ◽  
...  
Keyword(s):  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Relationship Analysis

scholarly journals Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

2020 ◽  
Vol 20 (6) ◽  
pp. 3801-3806 ◽  
Author(s):  
Saul Estandía ◽  
Nico Dix ◽  
Matthew F. Chisholm ◽  
Ignasi Fina ◽  
Florencio Sánchez
Keyword(s):  
Domain Matching Epitaxy

scholarly journals Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

2011 ◽  
Vol 99 (21) ◽  
pp. 211910 ◽  
Author(s):  
F. Sánchez ◽  
R. Bachelet ◽  
P. de Coux ◽  
B. Warot-Fonrose ◽  
V. Skumryev ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Matching Epitaxy

scholarly journals Growth of NbC Thin Film Using CH4 as a Carbon Source and Reducing Agent

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 379 ◽  
Author(s):  
Kwan-Woo Kim ◽  
Bum Kim ◽  
Sang Lee ◽  
Tuqeer Nasir ◽  
Hyung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Source ◽  
Chemical Vapor ◽  
Reducing Agent ◽  
Preferential Orientation ◽  
Nanoindentation Test ◽  
Chemical Vapor Deposition Method ◽  
Metal Carbides ◽  
Domain Matching Epitaxy ◽  
Ar Gas

Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.

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