scholarly journals Quantitative modeling of the temperature-dependent internal quantum efficiency in InGaN light emitting diodes

2014 ◽  
Vol 211 (11) ◽  
pp. 2509-2513 ◽  
Author(s):  
Anna Nirschl ◽  
Alvaro Gomez-Iglesias ◽  
Matthias Sabathil ◽  
Georg Hartung ◽  
Jürgen Off ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Quantitative Modeling ◽  
Temperature Dependent ◽  
Light Emitting

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

scholarly journals Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

Nanophotonics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 1601-1615 ◽  
Author(s):  
Jong-In Shim ◽  
Dong-Soo Shin
Keyword(s):  
Quantum Efficiency ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Measurement Techniques ◽  
Physical Parameters ◽  
Temperature Dependent ◽  
Reliable Measurement ◽  
Light Emitting ◽  
Temperature Reference

AbstractFor accurate and reliable measurement of the internal quantum efficiency (IQE) of light-emitting diodes (LEDs), the method should be theoretically solid and experimentally simple to use without any prior assumption of physical parameters or complicated equipment. In this paper, we critically review the conventional characterization techniques for measuring the IQE of LEDs, including the methods based on temperature-dependent electroluminescence and constant AB(C) models. After reviewing the limitations of the existing IQE measurement techniques, we present the recently proposed method based on the improved AB model, called room-temperature reference-point method (RTRM). The RTRM is then applied to various LED devices to show how the IQE measurement techniques can be utilized to analyze their optoelectronic performances quantitatively.

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Low Temperatures ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Estimating internal quantum efficiency of light-emitting diodes from current–voltage curves

2019 ◽  
Vol 12 (3) ◽  
pp. 032002 ◽  
Author(s):  
Chenziyi Mi ◽  
Lai Wang ◽  
Jie Jin ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Current Voltage

Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes

2012 ◽  
Vol 48 (4) ◽  
pp. 551-556 ◽  
Author(s):  
Chun-Hsiang Chang ◽  
Liang-Yi Chen ◽  
Li-Chuan Huang ◽  
Yu-Ting Wang ◽  
Tzu-Chun Lu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting
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