scholarly journals In(Ga)As/GaAs site-controlled quantum dots with tailored morphology and high optical quality

2012 ◽  
Vol 209 (12) ◽  
pp. 2379-2386 ◽  
Author(s):  
Christian Schneider ◽  
Alexander Huggenberger ◽  
Manuel Gschrey ◽  
Peter Gold ◽  
Sven Rodt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
High Optical Quality

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

2010 ◽  
Vol 96 (4) ◽  
pp. 043101 ◽  
Author(s):  
Damien Bordel ◽  
Denis Guimard ◽  
Mohan Rajesh ◽  
Masao Nishioka ◽  
Emmanuel Augendre ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Optical Quality ◽  
High Optical Quality

Low-density InP quantum dots embedded in Ga0.51In0.49P with high optical quality realized by a strain inducing layer

2010 ◽  
Vol 97 (6) ◽  
pp. 063107 ◽  
Author(s):  
Daniel Richter ◽  
Robert Roßbach ◽  
Wolfgang-Michael Schulz ◽  
Elisabeth Koroknay ◽  
Christian Kessler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Low Density ◽  
High Optical Quality ◽  
Inp Quantum Dots

scholarly journals MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

2010 ◽  
Vol 245 ◽  
pp. 012009
Author(s):  
D Richter ◽  
R Hafenbrak ◽  
K D Jöns ◽  
W-M Schulz ◽  
M Eichfelder ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Seed Layer ◽  
Optical Quality ◽  
Low Density ◽  
High Optical Quality ◽  
Inp Quantum Dots

MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band

2020 ◽  
Vol 31 (6) ◽  
pp. 4605-4610 ◽  
Author(s):  
Mansour Aouassa ◽  
Giorgia Franzò ◽  
Elie Assaf ◽  
Larbi Sfaxi ◽  
Ridha M’Ghaieth ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Optical Quality ◽  
Silicon Substrates ◽  
High Optical Quality ◽  
Mbe Growth

InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band

2015 ◽  
Vol 107 (8) ◽  
pp. 081106 ◽  
Author(s):  
Yating Wan ◽  
Qiang Li ◽  
Yu Geng ◽  
Bei Shi ◽  
Kei May Lau
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Si Substrate ◽  
High Optical Quality

Eu-doped ZnO quantum dots with solid-state fluorescence and dual emission for high-performance luminescent solar concentrators

2021 ◽  
Author(s):  
Xiao Gong ◽  
Hang Jiang ◽  
Mengyan Cao ◽  
Zhihui Rao ◽  
Xiujian Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Industrial Applications ◽  
Optical Quality ◽  
Dual Emission ◽  
Solar Concentrators ◽  
Environmental Friendliness ◽  
High Optical Quality ◽  
Luminescent Solar Concentrators ◽  
Doped Zno

Heavy-metal-free quantum dots (QDs) are promising luminophores for luminescent solar concentrators (LSCs) because of environmental friendliness, which is essential for industrial applications. In order to keep high optical quality and...

scholarly journals III-V nanostructures with different dimensionality on silicon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012121
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Optical Elements ◽  
High Optical Quality ◽  
Bandgap Semiconductors ◽  
Optic Systems ◽  
The Given

Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

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