Charge separation in organic semiconductor blends studied by electrical in situ characterization during film growth

2011 ◽  
Vol 209 (2) ◽  
pp. 323-326 ◽  
Author(s):  
Max Beu ◽  
André Dragässer ◽  
Christopher Keil ◽  
Derck Schlettwein
Keyword(s):  
Organic Semiconductor ◽  
Charge Separation ◽  
Film Growth ◽  
In Situ Characterization

In situ characterization of cubic boron nitride film growth in the IR spectral region

1998 ◽  
Vol 313-314 ◽  
pp. 697-703 ◽  
Author(s):  
K.-L Barth ◽  
W Fukarek ◽  
H.-P Maucher ◽  
M.F Plass ◽  
A Lunk
Keyword(s):  
Boron Nitride ◽  
Spectral Region ◽  
Film Growth ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
In Situ Characterization

In Situ Characterization of Ain Films Grown on Silicon by MOCVD

1998 ◽  
Vol 512 ◽  
Author(s):  
A. D. Serra ◽  
H. H. Richardson
Keyword(s):  
Film Growth ◽  
Growth Parameters ◽  
Emission Spectra ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
In Situ Characterization ◽  
X Ray ◽  
Ir Emission

ABSTRACTFilms of AIN were grown on Si under vacuum pressure at 900°C and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.

In situ Structural Study of Organic Semiconductor Thin Films

2012 ◽  
Vol 1402 ◽  
Author(s):  
Takuya Hosokai ◽  
Takeshi Watanabe ◽  
Tomoyuki Koganezawa ◽  
Jorg Ackermann ◽  
Hugues Brisset ◽  
...  
Keyword(s):  
Thin Films ◽  
Organic Semiconductor ◽  
Film Growth ◽  
High Vacuum ◽  
Film Structure ◽  
Air Exposure ◽  
Theoretical Simulation ◽  
Cell Parameters ◽  
Semiconductor Thin Films

ABSTRACTA new class of high-vacuum organic deposition chamber was developed to study the structure and growth of organic semiconductor thin films. Using the chamber in situ real-time 2-dimensional grazing incidence x-ray diffraction (2D-GIXD) was measured during thin film growth of distyryl-oligothiophenes derivatives (DS2T) on SiO2 surface. An evolution of 2D-GIXD pattern was clearly observed during the growth due to the crystallization of the molecular domains consisting of standing-up orientation. A theoretical simulation on the experimental 2D-GIXD map provided a potential use of this system to determine the unit cell parameters in thin films. Thickness dependence and influence of air exposure on the film structure were also studied.

Simulation of thin film growth and in situ characterization by RHEED and photoemission

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 931-934 ◽  
Author(s):  
M Djafari Rouhani ◽  
N Fazouan ◽  
AM Gue ◽  
D Estève
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Characterization
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