On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

2011 ◽  
Vol 208 (12) ◽  
pp. 2907-2912 ◽  
Author(s):  
X. Li ◽  
F. Zhang ◽  
S. Okur ◽  
V. Avrutin ◽  
S. J. Liu ◽  
...  
2012 ◽  
Vol 1402 ◽  
Author(s):  
Caroline Weichsel ◽  
Sebastian Reineke ◽  
Björn Lüssem ◽  
Karl Leo

ABSTRACTThe effect of the electron blocking layer on the performance of white organic light-emitting diodes is studied. A variation of the material influences not only the carrier transport, but also the light distribution from the different emitters. Highest external quantum efficiency is reached for the material with the worst electrical properties, while highest luminous efficacy is obtained for the material with the best transport characteristics.


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