The effect of annealing on the X-ray induced photocurrent characteristics of CVD diamond radiation detectors with different electrical contacts

2011 ◽  
Vol 208 (9) ◽  
pp. 2079-2086 ◽  
Author(s):  
Mohamed A. E. Abdel-Rahman ◽  
Annika Lohstroh ◽  
Paul J. Sellin
2005 ◽  
Vol 475-479 ◽  
pp. 3605-3610 ◽  
Author(s):  
S.G. Wang ◽  
P.J. Sellin ◽  
Q. Zhang ◽  
Fan Xiu Lu ◽  
Wei Zhong Tang ◽  
...  

In this study, X-ray detectors with coplanar metal-semiconductor-metal structure, were fabricated employing high quality chemical vapour deposited (CVD) diamond film grown by a direct current arc jet plasma system. In which the electrical contacts with dimension of 25 µm in width with a 25 µm inter-electrode spacing, were patterned on the growth side of the diamond film using lift-off technology. The performance of the fabricated detectors was evaluated by steady-state X-ray illumination. The photoconductivity of the diamond detectors was found to linearly increase with increase in the X-ray photon flux. This demonstrates that high quality CVD diamond can be used for X-ray detectors.


1994 ◽  
Vol 339 ◽  
Author(s):  
F. Foulon ◽  
T. Pochet ◽  
E. Gheeraert ◽  
A. Deneuville

ABSTRACTDiamond films produced by microwave plasma enhanced chemical vapor deposition (CVD) technique and used to fabricate radiation detectors have been characterized. The polycrystalline diamond films have a measured resistivity of 1012 Ω.cm and a carrier lifetime of about 530 ps. The carrier mobility - lifetime product depends on the density of photogenerated carriers. The carrier mobility decreases from 160 to 13 cm2/V.s for a carrier density increase from 2 × 1011 cm-3 to 3.7 × 1013 cm-3. The detector response to laser pulses (λ= 355, 532 and 1064 nm), X-ray flux (2.5 – 16 keV) and alpha particles (241Am, 5.49 MeV) has been investigated. The response speed of the detector is in the 100 ps range. X-ray photon flux measurements and alpha particle counting capabilities of the CVD diamond detectors are demonstrated.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Jen Bohon ◽  
John Smedley ◽  
Erik M. Muller ◽  
Jeffrey W. Keister

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.


2014 ◽  
Vol 2014 ◽  
pp. 1-3 ◽  
Author(s):  
Alka Garg ◽  
Monika Tomar ◽  
Vinay Gupta

Bismuth iodide is a potentially active material for room temperature radiation detector, as it is well reported in the literature that it has both wide energy band gap and high atomic absorption coefficient. Crystalline films of high atomic number and high radiation absorption coefficient can absorb the X-rays and convert them directly into electrical charges which can be read by imaging devices. Therefore, it was proposed to grow thin films of Bismuth iodide on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. The structural studies of the films were carried out using XRD and optical absorption measurement was carried out in the UV/VIS region using spectrophotometer. All Bismuth iodide films grown at room temperature are polycrystalline and show X-ray diffraction peaks at angles reported in research papers. The optical transmission spectra of BiI3 films show a high transmission of about 80% in visible region with a sharp fall near the fundamental absorption at 650 nm. Resistivity of the as-grown film was found to be around 1012 ohm-cm suitable value for X-ray detection application. Films were subjected to scanning electron microscopy to study the growth features of both as-grown and annealed films.


2021 ◽  
pp. 81-86
Author(s):  
Sharifa Utamuradova ◽  
Sultanposha Muzafarova ◽  
Abdulla Abdugafurov ◽  
Kakhramon Fayzullaev ◽  
Elmira Naurzalieva ◽  
...  

Based on CdTe and CdZnTe detectors a number of promising devices were created, which found their application in metallurgy, in solving the problems of customs control and control of nuclear materials, as well as matrix detectors created for the manufacture of medical devices and devices for space research. Detectors, created on the basis of polycrystalline semiconductor CdTe and CdZnTe films with a columnar structure on a molybdenum substrate with a thickness d = 30150 μm, had a specific resistance p > 10^5 10^8 W-cm. The energy resolution of the CdTe and CdZnTe detectors at room temperature reached ~ 5 keV on the 59.6 keV 241Am line.


2006 ◽  
Vol 48 ◽  
pp. 103-112 ◽  
Author(s):  
Claudio Manfredotti

CVD diamond films have reached in recent years superlative improvements in their “ detector grade “ quality, with a time derivative which was never registered for other similar frontier materials. The basic properties of high quality CVD diamond films make them very interesting for a wide range of radiation detectors : they provide fast signals with very low leakage currents, they are very radiation resistant, they have excellent thermal properties and they can be manufactured as free-standing detectors. The recent availability of single crystal CVD diamond samples of extreme good quality, suitable thickness and surface area has opened new application fields in nuclear detection and dosimetry, such as, for instance, hadron therapy and neutron spectrometry in fusion reactors. At the same time, strip and pixel detectors of unprecedented performances have been successfully realized and exploited in the framework of high energy physics experiments. The paper will review the more recent history of CVD diamond nuclear detectors with respect to material quality, with a particular emphasis on epitaxial single crystals diamond, and the achievements in terms of applications in some different fields.


2000 ◽  
Vol 368 (2) ◽  
pp. 297-299 ◽  
Author(s):  
Xuantong Ying ◽  
Xinmin Xu

2004 ◽  
Vol 201 (11) ◽  
pp. 2529-2535 ◽  
Author(s):  
M. J. Guerrero ◽  
D. Tromson ◽  
R. Barrett ◽  
R. Tucoulou Tachouères ◽  
P. Bergonzo
Keyword(s):  

1993 ◽  
Vol 302 ◽  
Author(s):  
R. B. James ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
A. Y. Cheng ◽  
V. M. Gerrish

ABSTRACTThe processing steps associated with purification of source material, crystal growth, and attachment of electrical contacts can introduce defects into mercuric iodide (HgI2) that degrade the performance of detectors. We have employed low-temperature photoluminescence (PL) spectroscopy to study radiative recombination centers in the interfacial region between a thin semitransparent film of silver and mercuric iodide. The Ag film was found to introduce a new broad emission band centered at 5490 Å in the photoluminescence spectrum of HgI2. This PL feature can be used as a signature to identify the existence of Ag as a contaminant in HgI2 crystals and detectors. Experiments were also conducted on mercuric iodide surfaces that had been doped with silver, and the results showed that Ag is a rapid diffuser in bulk HgI2. Detectors with silver electrodes were also fabricated and tested using an americium-241 gamma-ray source. Large increases in the leakage currents were observed for the Ag-doped HgI2 devices, indicated that Ag impurities are electrically active in HgI2. These measurements show that silver is unacceptable as an electrode material for mercuric iodide x-ray and gamma-ray detector applications. In addition, they reveal that caution must be taken during handling of mercuric iodide source material, crystals, and detectors to avoid contact with silver, silver compounds, or with any material that contains silver as a contaminant.


Author(s):  
Valery M. Skliarchuk ◽  
Petro M. Fochuk ◽  
Aleksey E. Bolotnikov ◽  
Ralph B. James

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