Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

2011 ◽  
Vol 208 (12) ◽  
pp. 2884-2888 ◽  
Author(s):  
P. C. Colter ◽  
C. Z. Carlin ◽  
J. P. Samberg ◽  
G. K. Bradshaw ◽  
S. M. Bedair
Keyword(s):  
Optical Devices ◽  
Strained Layer ◽  
Strained Layer Superlattices

Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices

1985 ◽  
Vol 56 ◽  
Author(s):  
S. A. Jackson ◽  
R. People
Keyword(s):  
Transition Probability ◽  
Optical Devices ◽  
Optical Transitions ◽  
Absorption Probability ◽  
Strained Layer ◽  
Optical Gap ◽  
Strained Layer Superlattice ◽  
Indirect Band Gap ◽  
Strained Layer Superlattices ◽  
Zone Folding

AbstractUsing a realistic zone-folding scheme for a Ge(x)Si(1−x)/Si strained layer superlattice having a Si-like conduction band structure (i.e ≲85% Ge) we calculate the transition probability for the zone-folding induced direct optical gap and compare it with the indirect band gap absorption probability. The results suggest that such zone-folding induced direct optical transitions are promising for optical devices made from Ge(x)Si(1−x)/Si strained layer superlattices and like structures, provided they are fabricated in such a way that the appropriate zone-folding occurs.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

Effects of electric field on ZnSe/ZnS strained-layer superlattices

1990 ◽  
Vol 101 (1-4) ◽  
pp. 550-553 ◽  
Author(s):  
Toshiya Yokogawa ◽  
Tohru Saitoh ◽  
Tadashi Narusawa
Keyword(s):  
Electric Field ◽  
Strained Layer ◽  
Strained Layer Superlattices

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

CdTe/ZnTe strained layer superlattices under high pressure

1990 ◽  
Vol 3 (1-6) ◽  
pp. 63-65 ◽  
Author(s):  
A. D. Prins ◽  
B. Gil ◽  
D. J. Dunstan ◽  
J. P. Faurie
Keyword(s):  
High Pressure ◽  
Strained Layer ◽  
Strained Layer Superlattices
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