Quantitative description of dark current-voltage characteristics of multicrystalline silicon solar cells based on lock-in thermography measurements

2010 ◽  
Vol 207 (9) ◽  
pp. 2159-2163 ◽  
Author(s):  
Otwin Breitenstein ◽  
Ankit Khanna ◽  
Wilhelm Warta
2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.


2013 ◽  
Vol 21 (3) ◽  
Author(s):  
O. Breitenstein

AbstractSolar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.


2015 ◽  
Vol 24 (3) ◽  
pp. 326-339 ◽  
Author(s):  
Milan Padilla ◽  
Christian Reichel ◽  
Nikolaus Hagedorn ◽  
Andreas Fell ◽  
Roman Keding ◽  
...  

2004 ◽  
Vol 85 (18) ◽  
pp. 4222-4224 ◽  
Author(s):  
L. Ferraioli ◽  
P. Maddalena ◽  
A. Parretta ◽  
A. Wang ◽  
J. Zhao

1962 ◽  
Vol 84 (1) ◽  
pp. 33-38 ◽  
Author(s):  
C. Pfeiffer ◽  
P. Schoffer ◽  
B. G. Spars ◽  
J. A. Duffie

Current-voltage characteristics of silicon solar cells cooled by conduction or convection at radiation levels up to 60 langleys per minute are reported for several cell temperatures. Maximum power output noted was approximately 65 milliwatts per square centimeter. The use of cells as flux measuring devices is noted.


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