Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

2011 ◽  
Vol 208 (7) ◽  
pp. 1501-1503 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Balakrishnan Krishnan ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Al Content ◽  
Dislocation Reduction ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jinchai Li ◽  
Na Gao ◽  
Duanjun Cai ◽  
Wei Lin ◽  
Kai Huang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Virus Transmission ◽  
Quantum Structures ◽  
Light Sources ◽  
Light Emitting ◽  
Al Content ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Ultraviolet Light Emitting Diodes

AbstractAs demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

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