The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

2010 ◽  
Vol 208 (3) ◽  
pp. 559-563 ◽  
Author(s):  
D. Macdonald ◽  
A. Liu ◽  
A. Cuevas ◽  
B. Lim ◽  
J. Schmidt
2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.


2015 ◽  
Vol 418 ◽  
pp. 38-44 ◽  
Author(s):  
Thècle Riberi-Béridot ◽  
Nathalie Mangelinck-Noël ◽  
Amina Tandjaoui ◽  
Guillaume Reinhart ◽  
Bernard Billia ◽  
...  

2020 ◽  
Vol 308 ◽  
pp. 138-156
Author(s):  
Małgorzata Musztyfaga-Staszuk ◽  
Piotr Panek

The purpose of this chapter of the book is to present knowledge on the use of laser technology in silicon photovoltaic cell manufacturing processes. Particular consideration was given to the technique of using a disk laser to cut the edges of silicon wafers together with the recognition of the flow of laser micromachining on the quality of cut edges to obtain their minimal deformation. The second topic described is the method of producing point contacts employing laser radiation between a layer of vaporised aluminium and crystalline silicon using the Nd:YAG laser. The results illustrating the impact of the structure and parameters of point contact for a given laser radiation energy on basic electrical parameters for complete, prototype solar cells are included. The chapter in the book provides an overview of the literature on the above topics and presents selected results of experimental works carried out by the authors. The motive for its publication is the need to present selected results of own research carried out in the Welding Department cooperating for many years with the Institute of Engineering and Biomedical Materials (IMIiB) of the Silesian University of Technology and the Institute of Metallurgy and Materials Engineering (IMIM) of the Polish Academy of Sciences in Cracow.


2018 ◽  
Vol 12 (4) ◽  
pp. 327-334 ◽  
Author(s):  
Galib Hashmi ◽  
Mohammad Junaebur Rashid ◽  
Zahid Hasan Mahmood ◽  
Mahbubul Hoq ◽  
Md. Habibur Rahman

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiawei Zhou ◽  
Hyun D. Shin ◽  
Ke Chen ◽  
Bai Song ◽  
Ryan A. Duncan ◽  
...  

AbstractAs a foundational concept in many-body physics, electron–phonon interaction is essential to understanding and manipulating charge and energy flow in various electronic, photonic, and energy conversion devices. While much progress has been made in uncovering how phonons affect electron dynamics, it remains a challenge to directly observe the impact of electrons on phonon transport, especially at environmental temperatures. Here, we probe the effect of charge carriers on phonon heat transport at room temperature, using a modified transient thermal grating technique. By optically exciting electron-hole pairs in a crystalline silicon membrane, we single out the effect of the phonon–carrier interaction. The enhanced phonon scattering by photoexcited free carriers results in a substantial reduction in thermal conductivity on a nanosecond timescale. Our study provides direct experimental evidence of the elusive role of electron–phonon interaction in phonon heat transport, which is important for understanding heat conduction in doped semiconductors. We also highlight the possibility of using light to dynamically control thermal transport via electron–phonon coupling.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Binetti ◽  
M. Acciarri ◽  
A. Le Donne ◽  
M. Morgano ◽  
Y. Jestin

Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV) modules are based on crystalline silicon (c-Si). PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.


2011 ◽  
Vol 8 ◽  
pp. 288-293 ◽  
Author(s):  
Florian Sevenig ◽  
Lena Breitenstein ◽  
Antje Oltersdorf ◽  
Karin Zimmermann ◽  
Martin Hermle

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7758
Author(s):  
Susana Fernández ◽  
José Pablo González ◽  
Javier Grandal ◽  
Alejandro F. Braña ◽  
María Belén Gómez-Mancebo ◽  
...  

Different functionalities of materials based on indium tin oxide and fabricated at soft conditions were investigated with the goal of being used in a next generation of solar photovoltaic devices. These thin films were fabricated in a commercial UNIVEX 450B magnetron sputtering. The first studied functionality consisted of an effective n-type doped layer in an n-p heterojunction based on p-type crystalline silicon. At this point, the impact of the ITO film thickness (varied from 45 to 140 nm) and the substrate temperature (varied from room temperature to 250 °C) on the heterojunction parameters was evaluated separately. To avoid possible damages in the heterojunction interface, the applied ITO power was purposely set as low as 25 W; and to minimize the energy consumption, no heat treatment process was used. The second functionality consisted of indium-saving transparent conductive multicomponent materials for full spectrum applications. This was carried out by the doping of the ITO matrix with transition metals, as titanium and zinc. This action can reduce the production cost without sacrificing the optoelectronic film properties. The morphology, chemical, structural nature and optoelectronic properties were evaluated as function of the doping concentrations. The results revealed low manufactured and suitable films used successfully as conventional emitter, and near-infrared extended transparent conductive materials with superior performance that conventional ones, useful for full spectrum applications. Both can open interesting choices for cost-effective photovoltaic technologies.


2020 ◽  
Vol 10 (16) ◽  
pp. 5465 ◽  
Author(s):  
Ilke Celik ◽  
Marina Lunardi ◽  
Austen Frederickson ◽  
Richard Corkish

This work provides economic and environmental analyses of transportation-related impacts of different photovoltaic (PV) module technologies at their end-of-life (EoL) phase. Our results show that crystalline silicon (c-Si) modules are the most economical PV technology (United States Dollars (USD) 2.3 per 1 m2 PV module (or 0.87 ¢/W) for transporting in the United States for 1000 km). Furthermore, we found that the financial costs of truck transportation for PV modules for 2000 km are only slightly more than for 1000 km. CO2-eq emissions associated with transport are a significant share of the EoL impacts, and those for copper indium gallium selenide (CIGS) PV modules are always higher than for c-Si and CdTe PV. Transportation associated CO2-eq emissions contribute 47%, 28%, and 40% of overall EoL impacts of c-Si, CdTe, and CIGS PV wastes, respectively. Overall, gasoline-fueled trucks have 65–95% more environmental impacts compared to alternative transportation options of the diesel and electric trains and ships. Finally, a hotspot analysis on the entire life cycle CO2-eq emissions of different PV technologies showed that the EoL phase-related emissions are more significant for thin-film PV modules compared to crystalline silicon PV technologies and, so, more environmentally friendly material recovery methods should be developed for thin film PV.


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