High-frequency surface acoustic wave filter based on diamond thin film

2011 ◽  
Vol 208 (5) ◽  
pp. 1072-1077 ◽  
Author(s):  
Satoshi Fujii
2004 ◽  
Vol 85 (10) ◽  
pp. 1757-1759 ◽  
Author(s):  
A. K. Sarin Kumar ◽  
P. Paruch ◽  
J.-M. Triscone ◽  
W. Daniau ◽  
S. Ballandras ◽  
...  

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 324-328 ◽  
Author(s):  
Hideaki Nakahata ◽  
Kenjiro Higaki ◽  
Akihiro Hachigo ◽  
Shinichi Shikata ◽  
Naoji Fujimori ◽  
...  

2019 ◽  
Vol 115 (21) ◽  
pp. 212104 ◽  
Author(s):  
Stefano Valle ◽  
Manikant Singh ◽  
Martin J. Cryan ◽  
Martin Kuball ◽  
Krishna C. Balram

2007 ◽  
Vol 336-338 ◽  
pp. 242-245
Author(s):  
X.B. Wang ◽  
J.J. Chen ◽  
D.M. Li ◽  
Fei Zeng ◽  
F. Pan

ZnO films with piezoelectric properties were deposited on polycrystalline diamond wafers for high frequency surface acoustic wave filter applications by dc reactive magnetron sputtering. The influences of different sputtering pressures and substrate temperatures on the properties of ZnO films were discussed. Highly c-axis oriented, fine-grain ZnO films with excellent surface flatness (average surface roughness of 5.3 nm) and high resistivities (6.3×107 *·cm) have been obtained. Then Al films for interdigital-transducer were deposited on ZnO/diamond by electron evaporation, a 2.48 GHz longitudinally- coupled double-mode surface acoustic wave filter has been fabricated using the Al/ZnO film on diamond wafer.


2005 ◽  
Vol 475-479 ◽  
pp. 3771-3774
Author(s):  
F. Pan ◽  
J.J. Chen ◽  
Fei Zeng ◽  
Y. Gao ◽  
D.M. Li

ZnO thin film, as a promising piezoelectric material, possesses unique electrical, acoustical, and optical properties. In this paper, Al/ZnO thin film was deposited on Si wafer by magnetron sputtering. Highly oriented, dense, and fine-grain polycrystalline ZnO films with excellent surface flatness and high resistivities have been obtained, when the sputtered gas pressure was 0.9 Pa, the temperature was 200 °C and the Ar-to-O2 ratio was 1:3. A 780MHz surface acoustic wave filter (SAWF) has been successfully fabricated using the Al/ZnO film on silicon wafer.


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