Assembly, structure, and performance of an ultra-thin film organic field-effect transistor (OFET) based on substituted oligothiophenes

2008 ◽  
Vol 205 (3) ◽  
pp. 430-439 ◽  
Author(s):  
K. Haubner ◽  
E. Jaehne ◽  
H.-J. P. Adler ◽  
D. Koehler ◽  
C. Loppacher ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Assembly Structure ◽  
Effect Transistor ◽  
And Performance ◽  
Ultra Thin Film

scholarly journals Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Binder ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

Organic Field-effect Transistor Based on a Thin Film of Polydiacetylene Prepared from 10,12-Pentacosadiynoic Acid

2006 ◽  
Vol 35 (1) ◽  
pp. 20-21 ◽  
Author(s):  
Tomohiro Koyanagi ◽  
Masanori Muratsubaki ◽  
Yoshinobu Hosoi ◽  
Takanori Shibata ◽  
Ken Tsutsui ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

A programmable single-component diode based on an ambipolar organic field-effect transistor (OFET)

2012 ◽  
Vol 84 (4) ◽  
pp. 979-989 ◽  
Author(s):  
Tadashi Sugawara ◽  
Takuro Itoh ◽  
Kentaro Suzuki ◽  
Hiroyuki Higuchi ◽  
Michio M. Matsushita
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Alternating Current ◽  
Floating Gate ◽  
Molecular Device ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Oppositely Charged

An ambipolar field-effect transistor (FET) based on tetracyanoquarterthienoquinoid (TCT4Q) was constructed. When a set of source, drain, and gate voltages were applied to a thin film of TCT4Q at temperatures lower than 150 K, both positive and negative carriers were trapped and frozen even after removal of the gate voltage. The frozen carriers worked as a floating gate with the gradient by creating a PN(NP) junction through the injection of oppositely charged “mobile” carriers. The device exhibited a distinct rectifying effect when an alternating current (50 < f <500 mHz) was applied through the source and drain electrodes. Moreover, the function of the molecular device is programmable and erasable.

Sign in / Sign up

Export Citation Format

Share Document