Quantitative microstructure characterization of self-annealed copper films with electron backscatter diffraction

2008 ◽  
Vol 205 (2) ◽  
pp. 275-281 ◽  
Author(s):  
Karen Pantleon ◽  
Ali Gholinia ◽  
Marcel A. J. Somers
Keyword(s):  
Electron Backscatter Diffraction ◽  
Microstructure Characterization ◽  
Copper Films ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Annealed Copper

Application of Electron Backscatter Diffraction for Crystallographic Characterization of Tin Whiskers

2012 ◽  
Vol 18 (4) ◽  
pp. 876-884 ◽  
Author(s):  
Joseph R. Michael ◽  
Bonnie B. McKenzie ◽  
Donald F. Susan
Keyword(s):  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Tin Whiskers ◽  
Physical Growth ◽  
Final Choice ◽  
Advantages And Disadvantages ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractUnderstanding the growth of whiskers or high aspect ratio features on substrates can be aided when the crystallography of the feature is known. This study has evaluated three methods that utilize electron backscatter diffraction (EBSD) for the determination of the crystallographic growth direction of an individual whisker. EBSD has traditionally been a technique applied to planar, polished samples, and thus the use of EBSD for out-of-surface features is somewhat more difficult and requires additional steps. One of the methods requires the whiskers to be removed from the substrate resulting in the loss of valuable physical growth relationships between the whisker and the substrate. The other two techniques do not suffer this disadvantage and provide the physical growth information as well as the crystallographic growth directions. The final choice of method depends on the information required. The accuracy and the advantages and disadvantages of each method are discussed.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

Use of Electron Backscatter Diffraction Technique in Characterization of 6XXX Aluminum Alloy Extrusions

2000 ◽  
Vol 6 (S2) ◽  
pp. 954-955
Author(s):  
Steven R. Claves ◽  
Wojciech Z. Misiolek ◽  
William H. Van Geertruyden ◽  
David B. Williams
Keyword(s):  
Electron Backscatter Diffraction ◽  
Metal Flow ◽  
Extrusion Process ◽  
Cross Sectional ◽  
Electron Backscattering Diffraction ◽  
Electron Backscatter ◽  
Individual Grains ◽  
Backscatter Diffraction ◽  
6Xxx Series

Electron Backscattering Diffraction (EBSD) is an important tool for analyzing the crystal grain orientation of a microstructure and can be used to formulate conclusions about microtexture, texture determined from individual grains. This technique has been used to study a 6xxx series aluminum alloy's response to the deformation of the extrusion process. Extrusion is the process by which a billet of material is forced, under high pressure, through a die. The material undergoes a significant decrease in cross sectional area, and is formed into a shape equivalent to the geometry of the die orifice. Different bearing lands are shown in shown in Figure 1. These surfaces form the part, and are designed to control the metal flow making it uniform through the die, thus yielding good mechanical properties. This research was focused on the resultant microstructure. The shaded regions of Figure 2 show the two surface regions where EBSD measurements were taken.

EBSD Characterization of Pure Iron Deformed by ECAE

2010 ◽  
Vol 638-642 ◽  
pp. 1995-2000 ◽  
Author(s):  
Reny Angela Renzetti ◽  
M.J.R. Sandim ◽  
Hugo Ricardo Zschommler Sandim ◽  
K.T. Hartwig ◽  
Heide H. Bernardi ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Electron Backscatter Diffraction ◽  
Softening Mechanism ◽  
Resolution Electron ◽  
Mean Grain Size ◽  
Electron Backscatter ◽  
Deformed State ◽  
The Mean ◽  
Backscatter Diffraction

Polycrystalline iron was deformed by eight ECAE passes using the route Bc to a total strain of 9.2. After deformation the material was annealed at temperatures up to 800oC. Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) were used to characterize both deformed and annealed structures. In the as-deformed state, the mean grain size is 650 nm and the volume fraction of high angle boundaries (VHAB) is 56%. Upon annealing there is a pronounced softening above 300oC. At the beginning of recrystallization, at about 400oC, the VHAB increases to 71%. The results indicate that discontinuous recrystallization is the main softening mechanism in severely deformed iron.

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