Features of dislocation images reconstructed from step-scanned white X-ray section topographs

2007 ◽  
Vol 204 (8) ◽  
pp. 2682-2687 ◽  
Author(s):  
Kentaro Kajiwara ◽  
Seiji Kawado ◽  
Satoshi Iida ◽  
Yoshifumi Suzuki ◽  
Yoshinori Chikaura
Keyword(s):  
X Ray ◽  
Section Topographs

Epitaxial Lateral Overgrowth of Gallium Arsenide Studied by Synchrotron Topography

1999 ◽  
Vol 570 ◽  
Author(s):  
R. Rantamäki ◽  
T. Tuomi ◽  
Z. R. Zytkiewicz ◽  
D. Dobosz ◽  
P. J. Mcnally ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Surface Profile ◽  
Epitaxial Lateral Overgrowth ◽  
Simulation Data ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Lattice Planes ◽  
Section Topographs ◽  
Transmission And Reflection ◽  
Good Agreement

ABSTRACTSynchrotron x-ray topographs of GaAs epitaxial lateral overgrowth (ELO) samples are made both in transmission and reflection geometries. The topographs show that the bending of the ELO layers is visible in most geometries. A simulation of the topographic images is implemented taking into account only the orientational contrast. Simulated back reflection section topographs are in good agreement with the experimental ones. The shape of the lattice planes in an ELO layer is calculated using the simulation data and compared to the measured surface profile of the same ELO stripe.

Dislocation images in X-ray section topographs of curved crystals

1991 ◽  
Vol 24 (4) ◽  
pp. 304-311 ◽  
Author(s):  
G. S. Green ◽  
N. Loxley ◽  
B. K. Tanner
Keyword(s):  
X Ray ◽  
Section Topographs

Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 3779-3785 ◽  
Author(s):  
Kouhei Okitsu ◽  
Satoshi Iida ◽  
Yoshimitsu Sugita ◽  
Hiroshi Takeno ◽  
Yasuyoshi Yagou ◽  
...  
Keyword(s):  
Strain Field ◽  
Silicon Crystal ◽  
Floating Zone ◽  
X Ray ◽  
Section Topographs

Simulation of images of spherical strain centres in X-ray section topographs

1990 ◽  
Vol 61 (1) ◽  
pp. 23-33 ◽  
Author(s):  
G. S. Green ◽  
Cui Shu Fan ◽  
B. K. Tanner
Keyword(s):  
X Ray ◽  
Section Topographs

The contrast of inclusions compared with that of micropipes in back-reflection synchrotron white-beam topographs of SiC

2004 ◽  
Vol 37 (2) ◽  
pp. 200-203 ◽  
Author(s):  
W. M. Vetter ◽  
M. Dudley
Keyword(s):  
Screw Dislocation ◽  
Spherical Inclusion ◽  
Vertical Displacement ◽  
Displacement Function ◽  
Elastic Displacement ◽  
X Ray ◽  
Back Reflection ◽  
White Beam ◽  
Light Contrast ◽  
Section Topographs

Images of inclusions in synchrotron white-beam back-reflection X-ray topographs appear as spots of light contrast surrounded by darker rings, resembling images of micropipes, which appear as distinct white circles surrounded by dark rings. Section topographs taken across the centers of micropipes gave vertically displaced two-tailed images, arising from the helical tilt of the reflecting planes about the micropipes' screw dislocation axes. Section topographs taken across the inclusions showed no vertical displacement, only dark bars bracketing a region of depleted contrast, arising from the convex bulge of the reflecting planes lying above the inclusion. The features of the inclusion images could be reproduced in computer simulations based on the elastic displacement function of a spherical inclusion in a semi-infinite solid, and compared with others based on the displacement function of a screw dislocation in an infinite solid.

scholarly journals X-ray section topographs of a cube-shaped diamond.

1985 ◽  
Vol 12 (6) ◽  
pp. 245-250 ◽  
Author(s):  
Hiromoto NAKAZAWA ◽  
Tokuhei TAGAI ◽  
Hisako HIRAI ◽  
Yoshinori SATOW
Keyword(s):  
X Ray ◽  
Section Topographs

Simulation of decorated dislocation images in X-ray section topographs

1996 ◽  
Vol 73 (5) ◽  
pp. 1451-1474
Author(s):  
A. J. Holland ◽  
B. K. Tanner
Keyword(s):  
X Ray ◽  
Section Topographs

Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. II

2017 ◽  
Vol 73 (1) ◽  
pp. 30-38 ◽  
Author(s):  
V. G. Kohn
Keyword(s):  
Absorption Coefficient ◽  
Angular Dependence ◽  
Computer Simulations ◽  
Silicon Crystal ◽  
Phase Method ◽  
Stationary Phase Method ◽  
Fast Fourier Transformation ◽  
Effective Absorption Coefficient ◽  
X Ray ◽  
Section Topographs

This paper reports computer simulations of X-ray six-beam (000, 220, 242, 044, −224, −202) diffraction in a perfect silicon crystal of large thickness where the super-transmission effect prevails,i.e.about 2 cm or more for an X-ray photon energy of 8 keV. Both the plane-wave angular dependence and the six-beam section topographs, which are obtained in experiments with a two-dimensional slit, are calculated. The angular dependence is computed by means of an eigenvalue problem in accordance with Ewald's theory. The section topographs are calculated by means of a fast Fourier transformation procedure from the angular to real space. It is shown that under the effect of X-ray super-transmission the quadrupole part of the photoelectric absorption as well as the Compton scattering give apparent contributions to the minimum absorption coefficient. Comparison of experimental and theoretical results by means of measuring the effective absorption coefficient is proposed. The section topographs for a thick crystal are asymmetric and polarization sensitive. These properties are explained through the angular dependence and the stationary phase method.

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