Crystal quality and growth evolution of aluminum nitride on silicon carbide

2006 ◽  
Vol 203 (7) ◽  
pp. 1708-1711 ◽  
Author(s):  
Craig G. Moe ◽  
Yuan Wu ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Crystal Quality ◽  
Growth Evolution

Synthesis of Aluminum Nitride-Silicon Carbide Solid Solutions by Combustion Nitridation

2004 ◽  
Vol 83 (5) ◽  
pp. 1108-1112 ◽  
Author(s):  
Manshi Ohyanagi ◽  
Kenshiro Shirai ◽  
Nadejda Balandina ◽  
Masaaki Hisa ◽  
Zuhair A. Munir
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Solid Solutions

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

2003 ◽  
Vol 433-436 ◽  
pp. 983-986 ◽  
Author(s):  
Boris M. Epelbaum ◽  
Matthias Bickermann ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

2019 ◽  
Vol 61 (12) ◽  
pp. 2386-2391 ◽  
Author(s):  
O. N. Sergeeva ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
T. S. Il’ina ◽  
S. A. Kukushkin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Silicon Substrate ◽  
Carbide Layer
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