Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors

2005 ◽  
Vol 202 (5) ◽  
pp. 939-943 ◽  
Author(s):  
G. Vanderschaeve ◽  
D. Caillard
Keyword(s):  
Partial Dislocations ◽  
Elemental Semiconductors

A Many-Beam Technique for Enhanced Resolution of Partial Dislocations

1972 ◽  
Vol 30 ◽  
pp. 646-647
Author(s):  
J. M. Oblak ◽  
B. H. Kear
Keyword(s):  
Phase Shift ◽  
Field Method ◽  
Dark Field ◽  
Bright Field ◽  
Field Technique ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Enhanced Resolution ◽  
Nickel Base ◽  
Beam Technique

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.

Evidence for a shear mechanism for the precipitation of γ-zirconium hydride in zirconium

1978 ◽  
Vol 36 (1) ◽  
pp. 658-659
Author(s):  
G.J.C. Carpenter
Keyword(s):  
Elevated Temperature ◽  
Strain Field ◽  
Zirconium Hydride ◽  
Zirconium Atom ◽  
Atom Diffusion ◽  
Solvus Temperature ◽  
Hexagonal Close Packed ◽  
Partial Dislocations ◽  
The Face

In zirconium-hydrogen alloys, rapid cooling from an elevated temperature causes precipitation of the face-centred tetragonal (fct) phase, γZrH, in the form of needles, parallel to the close-packed <1120>zr directions (1). With low hydrogen concentrations, the hydride solvus is sufficiently low that zirconium atom diffusion cannot occur. For example, with 6 μg/g hydrogen, the solvus temperature is approximately 370 K (2), at which only the hydrogen diffuses readily. Shears are therefore necessary to produce the crystallographic transformation from hexagonal close-packed (hep) zirconium to fct hydride.The simplest mechanism for the transformation is the passage of Shockley partial dislocations having Burgers vectors (b) of the type 1/3<0110> on every second (0001)Zr plane. If the partial dislocations are in the form of loops with the same b, the crosssection of a hydride precipitate will be as shown in fig.1. A consequence of this type of transformation is that a cumulative shear, S, is produced that leads to a strain field in the surrounding zirconium matrix, as illustrated in fig.2a.

On effects of non-systematic reflections on weak-beam images of partial dislocations

1991 ◽  
Vol 49 ◽  
pp. 688-689
Author(s):  
K. Z. Botros ◽  
S. S. Sheinin
Keyword(s):  
High Precision ◽  
Stacking Fault ◽  
Important Application ◽  
Stacking Fault Energy ◽  
Sharp Peak ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Deviation Parameter ◽  
Beam Diffraction

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

Structure of stacking faults in pyrite using TEM techniques

1992 ◽  
Vol 50 (1) ◽  
pp. 358-359
Author(s):  
Raja Subramanian ◽  
Kenneth S. Vecchio
Keyword(s):  
Lattice Structure ◽  
Stacking Faults ◽  
Covalent Bond ◽  
Group Symmetry ◽  
Iron Pyrite ◽  
Dislocation Glide ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Chlorine Ions

The structure of stacking faults and partial dislocations in iron pyrite (FeS2) have been studied using transmission electron microscopy. Pyrite has the NaCl structure in which the sodium ions are replaced by iron and chlorine ions by covalently-bonded pairs of sulfur ions. These sulfur pairs are oriented along the <111> direction. This covalent bond between sulfur atoms is the strongest bond in pyrite with Pa3 space group symmetry. These sulfur pairs are believed to move as a whole during dislocation glide. The lattice structure across these stacking faults is of interest as the presence of these stacking faults has been preliminarily linked to a higher sulfur reactivity in pyrite. Conventional TEM contrast analysis and high resolution lattice imaging of the faulted area in the TEM specimen has been carried out.

CORE STRUCTURE OF 90° PARTIAL DISLOCATIONS IN DIAMOND

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-37-C4-42 ◽  
Author(s):  
K. W. Lodge ◽  
A. Lapiccirella ◽  
N. Tomassini ◽  
S. L. Altmann
Keyword(s):  
Core Structure ◽  
Partial Dislocations

scholarly journals Numerical Study and Experimental Validation of Deformation of FCC CuAl Single Crystal Obtained by Additive Manufacturing

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 582
Author(s):  
Anton Y. Nikonov ◽  
Andrey I. Dmitriev ◽  
Dmitry V. Lychagin ◽  
Lilia L. Lychagina ◽  
Artem A. Bibko ◽  
...  
Keyword(s):  
Single Crystal ◽  
Numerical Study ◽  
Strain Curve ◽  
Aluminum Bronze ◽  
Partial Dislocations ◽  
Slip Planes ◽  
Loaded Material ◽  
Dislocation Movement ◽  
Dynamics Simulations ◽  
Experimental Findings

The importance of taking into account directional solidification of grains formed during 3D printing is determined by a substantial influence of their crystallographic orientation on the mechanical properties of a loaded material. This issue is studied in the present study using molecular dynamics simulations. The compression of an FCC single crystal of aluminum bronze was performed along the <111> axis. A Ni single crystal, which is characterized by higher stacking fault energy (SFE) than aluminum bronze, was also considered. It was found that the first dislocations started to move earlier in the material with lower SFE, in which the slip of two Shockley partials was observed. In the case of the material with higher SFE, the slip of a full dislocation occurred via successive splitting of its segments into partial dislocations. Regardless of the SFE value, the deformation was primarily occurred by means of the formation of dislocation complexes involved stair-rod dislocations and partial dislocations on adjacent slip planes. Hardening and softening segments of the calculated stress–strain curve were shown to correspond to the periods of hindering of dislocations at dislocation pileups and dislocation movement between them. The simulation results well agree with the experimental findings.

Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In

1989 ◽  
Vol 59 (3) ◽  
pp. 121-129 ◽  
Author(s):  
N. Burle-Durbec ◽  
B. Pichaud ◽  
F. Minari
Keyword(s):  
Partial Dislocations
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