Evaluation of MESFET structures from temperature-dependent Hall effect measurements

2003 ◽  
Vol 195 (1) ◽  
pp. 243-247 ◽  
Author(s):  
P. Terziyska ◽  
C. Blanc ◽  
J. Pernot ◽  
H. Peyre ◽  
S. Contreras ◽  
...  
Keyword(s):  
Hall Effect ◽  
Temperature Dependent ◽  
Hall Effect Measurements

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

2012 ◽  
Vol 21 (7) ◽  
pp. 1469-1477 ◽  
Author(s):  
Chiara Modanese ◽  
Maurizio Acciarri ◽  
Simona Binetti ◽  
Anne-Karin Søiland ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Solar Grade Silicon ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
Grade Silicon ◽  
P Type

scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

Hall Effect Measurements on New Thermoelectric Materials

2003 ◽  
Vol 793 ◽  
Author(s):  
Jarrod Short ◽  
Sim Loo ◽  
Sangeeta Lal ◽  
Kuei Fang Hsu ◽  
Eric Quarez ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Measurement System ◽  
Material Properties ◽  
Figure Of Merit ◽  
New Materials ◽  
Temperature Dependent ◽  
Additional Insight ◽  
Hall Effect Measurements

ABSTRACTIn the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass.To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 677-680 ◽  
Author(s):  
L. Kasamakova-Kolaklieva ◽  
L. Storasta ◽  
Ivan G. Ivanov ◽  
Björn Magnusson ◽  
Sylvie Contreras ◽  
...  
Keyword(s):  
Hall Effect ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
P Type

The Nature of Electrically Inactive Implanted Arsenic in Silicon after Rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
John L. Altrip ◽  
Alan G.R. Evans ◽  
Nigel D. Young ◽  
John R. Logan
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Low Dose ◽  
Solubility Limit ◽  
High Dose ◽  
Temperature Dependent ◽  
Spreading Resistance ◽  
Hall Effect Measurements

AbstractThe electrical activation of As implanted Si has been investigated on rapid thermal annealing timescales using sheet resistance, spreading resistance and Hall Effect techniques. For high dose implants (>1015 As cm-2) differential Hall Effect and spreading resistance profiles confirm the existence of a temperature dependent electrical solubility limit. However for low dose implants, annealing schedules chosen such that the electrical solubility limit is not exceeded reveal electrical deactivation which is not accounted for in the clustering theory. Hall Effect measurements performed as a function of temperature have enabled us to reveal directly electrically inactive As which is not observable at room temperature using standard electrical techniques. The results indicate that As atoms in Si introduce deep trapping levels within the bandgap which are responsible forremoving As from the conduction process at room temperature. This temperature activated process is characterized with an activation energy of 0.4eV.

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