Group III nitride-based UV light emitting devices

2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki
Keyword(s):  
Uv Light ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Group Iii Nitride

Advances in group III-nitride-based deep UV light-emitting diode technology

2010 ◽  
Vol 26 (1) ◽  
pp. 014036 ◽  
Author(s):  
M Kneissl ◽  
T Kolbe ◽  
C Chua ◽  
V Kueller ◽  
N Lobo ◽  
...  
Keyword(s):  
Uv Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Group Iii ◽  
Deep Uv ◽  
Group Iii Nitride

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices

2007 ◽  
Vol 4 (5) ◽  
pp. 1719-1722 ◽  
Author(s):  
Masatoshi Arai ◽  
Koichi Sugimoto ◽  
Shinichi Egawa ◽  
Taichi Baba ◽  
Tohru Honda
Keyword(s):  
Uv Light ◽  
Light Emitting ◽  
Enhancement Technique ◽  
Light Emitting Devices

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

2006 ◽  
Vol 515 (2) ◽  
pp. 768-770 ◽  
Author(s):  
M. Iwaya ◽  
H. Kasugai ◽  
T. Kawashima ◽  
K. Iida ◽  
A. Honshio ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Group Iii ◽  
Group Iii Nitride
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