Influence of insulating barrier thickness on the magnetoresistance properties of a magnetic tunnel junction with Zr-alloyed Al oxide barrier

2004 ◽  
Vol 201 (8) ◽  
pp. 1704-1707 ◽  
Author(s):  
Chul-Min Choi ◽  
Seong-Rae Lee
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Barrier Thickness ◽  
Oxide Barrier ◽  
Al Oxide

scholarly journals Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065126
Author(s):  
Han-Sol Jun ◽  
Jin-Young Choi ◽  
Kei Ashiba ◽  
Sun-Hwa Jung ◽  
Miri Park ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Barrier Thickness ◽  
Multi Level ◽  
Level Resistance

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

2015 ◽  
Vol 781 ◽  
pp. 172-175
Author(s):  
Chayada Surawanitkun
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Barrier Thickness ◽  
Magnetization Switching ◽  
Magnetization Direction ◽  
Initial Magnetization ◽  
Temperature Increment

Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ0, and the MgO layer thickness for different pulse durations, tp. The results show that the highest temperature in MTJ nanopillar is significant at the θ0 of1°-5° and the pulse duration tp < 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ0 of1°-5° for the same tp.

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