A comparison of ARC and other thermal stability test methods

1984 ◽  
Vol 3 (4) ◽  
pp. 197-202 ◽  
Author(s):  
W. J. Fenlon
Keyword(s):  
Thermal Stability ◽  
Test Methods ◽  
Stability Test

Thermal stability test and analysis of a 20-actuator bimorph deformable mirror

2009 ◽  
Vol 18 (3) ◽  
pp. 1089-1095 ◽  
Author(s):  
Ning Yu ◽  
Zhou Hong ◽  
Yu Hao ◽  
Rao Chang-Hui ◽  
Jiang Wen-Han
Keyword(s):  
Thermal Stability ◽  
Stability Test ◽  
Deformable Mirror

Thermal Stability Study of the Interconnect System with Fluorinated Silicate Glass as IMD Layers

1997 ◽  
Vol 476 ◽  
Author(s):  
Weidan Li ◽  
Wilbur Catabay
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Silicate Glass ◽  
Elevated Temperatures ◽  
Stability Test ◽  
Silicon Nitride Film ◽  
Barrier Materials ◽  
Device Reliability ◽  
Interconnect System ◽  
Thermal Stability Of

AbstractWhile fluorinated silicate glass (FSG) has been proposed for low k inter-metal dielectric (IMD) applications in a multi-level interconnect system either as the only IMD material, or as one of the materials for a multi-layer IMD system, thermal stability of the FSG film and its impact on device reliability remain a concern for this application. In this study, SIMS, SEM, and optical microscope analyses were carried out to evaluate the thermal stability of the FSG films and the possible reactions between FSG and metals. It was observed that at elevated temperatures fluorine tends to diffuse into an undoped oxide film rather than be desorbed. The data indicate that F diffuses 3.5 times faster in a silicon oxide film than in a silicon nitride film. Sub-half micron devices were processed with FSG as IMD layers. The devices were tested using an intensive thermal stability test methodology. A TiSi2 reaction with F which diffused from the FSG film was observed under optical microscopy. This reaction caused TiSi2 delamination. Electrical characterization of devices was performed before and after the thermal stability test. Although the device performance did not change greatly, the reaction certainly affects the long term device reliability (vide infra). Barrier materials were investigated to solve the F diffusion problem. With the proper diffusion barrier, the problem of the fluorine reaction with TiSi2 and subsequent metal blistering was eliminated.

Drive level media thermal stability test

2001 ◽  
Vol 37 (4) ◽  
pp. 1547-1549 ◽  
Author(s):  
Ning Li ◽  
F. Meyer ◽  
B. Zak
Keyword(s):  
Thermal Stability ◽  
Drive Level ◽  
Stability Test
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