Relationship between edge roughness in mask pattern and charging in plasma etching

2019 ◽  
Vol 17 (2) ◽  
pp. 1900177 ◽  
Author(s):  
Peng Zhang
Keyword(s):  
Plasma Etching ◽  
Mask Pattern ◽  
Edge Roughness

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

2009 ◽  
Author(s):  
Vassilios Constantoudis ◽  
George Kokkoris ◽  
Panayiota Xydi ◽  
Evangelos Gogolides ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Experimental Results ◽  
Line Edge Roughness ◽  
Modeling Approaches ◽  
Edge Roughness

Effects of Mask Pattern Geometry on Plasma Etching Profiles

2009 ◽  
Vol 48 (9) ◽  
pp. 096001 ◽  
Author(s):  
Hiroshi Fukumoto ◽  
Koji Eriguchi ◽  
Kouichi Ono
Keyword(s):  
Plasma Etching ◽  
Mask Pattern

Competitive effect between roughness and mask pattern on charging phenomena during plasma etching

2022 ◽  
Author(s):  
Peng Zhang ◽  
Ruvarashe Dambire
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Classical Particle ◽  
Particle Dynamic ◽  
Mask Pattern ◽  
Competitive Effect ◽  
Hexagonal Array ◽  
Dynamic Simulations ◽  
Surface Charging ◽  
Two Factors

Abstract In plasma etching process, the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of charging effect. The competitive effect between these two factors has been investigated, focusing on the surface charging in a hexagonal array, with various values of roughness parameters (amplitude (A) and wavelength (W)) and distances between holes (L). A series of classical particle dynamic simulations of surface charging, surface etching and profile evolution were used to investigate the effect of roughness and pattern on charging. This study showed that various roughness and patterns (represented by different values of L) can significantly influence surface distributions of the electric-field (E-field) and the etching rates on the mask surface. The simulations also showed that (1) the shape of the pattern array influences the mask hole profile during etching process, i.e. a hexagonal array pattern tends to deform the profile of a circular mask hole into a hexagonal hole; (2) pattern roughness is aggravated during etching process. These factors were found to be significant only at a small feature pitch and may be ignored at a large feature pitch. Possible mechanisms of these results during etching process are discussed. This work sheds light on the ways to maintain pattern integrity and further improve the quality of the pattern transfer onto the substrate.

Modeling of line edge roughness transfer during plasma etching

2009 ◽  
Vol 86 (4-6) ◽  
pp. 968-970 ◽  
Author(s):  
V. Constantoudis ◽  
G. Kokkoris ◽  
P. Xydi ◽  
G.P. Patsis ◽  
E. Gogolides
Keyword(s):  
Plasma Etching ◽  
Line Edge Roughness ◽  
Edge Roughness
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