Study of Plasma Properties for the Low-Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

2015 ◽  
Vol 13 (1) ◽  
pp. 134-146 ◽  
Author(s):  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han ◽  
Jay Bum Kim ◽  
Manish Kumar ◽  
Subong Jin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Zno Film ◽  
Dc Magnetron Sputtering ◽  
Plasma Properties ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Doped Zno

The mechanism of low temperature deposition of crystalline anatase by reactive DC magnetron sputtering

2005 ◽  
Vol 190 (2-3) ◽  
pp. 321-330 ◽  
Author(s):  
Mark C. Barnes ◽  
Sunil Kumar ◽  
Len Green ◽  
Nong-Moon Hwang ◽  
Andrea R. Gerson
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Low Temperature Deposition ◽  
Temperature Deposition

HIGH-QUALITY INTRINSIC ZnO FILM FOR THE APPLICATION OF SOLAR CELL GROWN BY ICP-ASSISTED REACTIVE DC MAGNETRON SPUTTERING AT LOW TEMPERATURE

2007 ◽  
Vol 14 (06) ◽  
pp. 1083-1087
Author(s):  
X. B. XU ◽  
S. M. HUANG ◽  
Y. W. CHEN ◽  
Z. SUN ◽  
S. Y. HUANG
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Visible Range ◽  
Zno Film ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
Solar Cell Application ◽  
Inductively Coupled

Intrinsic zinc oxide (i- ZnO ) film was prepared for CuInSe 2 (CIS) solar cell application [L. Stolt and J. Hedstrom, Appl. Phys. Lett.62 (1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering and under a quite low temperature of 50°C. The sputtering was done in an Ar and O 2 gas mixture and a ceramic ZnO target was used. The microstructures of the film were investigated by X-ray diffractometer and scanning electron microscope. It was shown that all of the films had a c-axis preferred orientation perpendicular to the substrate. In our work, film with resistivity of 7 × 108Ω· cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure and 50°C temperature.

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