Temperature dependence of the convex solubility parameters of organic semiconductors

2015 ◽  
Vol 54 (1) ◽  
pp. 81-88 ◽  
Author(s):  
Jason S. Howell ◽  
David S. Boucher
2003 ◽  
Vol 94 (2) ◽  
pp. 1283-1285 ◽  
Author(s):  
Vikram Kumar ◽  
S. C. Jain ◽  
A. K. Kapoor ◽  
J. Poortmans ◽  
R. Mertens

2016 ◽  
Vol 2016 ◽  
pp. 1-18 ◽  
Author(s):  
Yizhak Marcus

The solubility parameters,δH(Tb), of nonreactive permanent gases at their boiling pointsTb(<290 K) are calculated from individually discussed values of their molar enthalpies of vaporization and densities obtained from the literature. These values are tabulated and where available the coefficients of the temperature dependence expressionδH(T)are also tabulated. The trends noted in theδH(Tb)values are dealt with and the values are compared with those reported in the literature and derived from the solubilities of the gases in various solvents. TheδH(Tb)values are shown to correlate linearly with the depths of the potential wells (attractive interaction energies,ε/kB) for binary collisions of the gaseous molecules and with the surface tensions,σ(Tb), of the liquefied gases.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yinan Huang ◽  
Xue Gong ◽  
Yancheng Meng ◽  
Zhongwu Wang ◽  
Xiaosong Chen ◽  
...  

AbstractThe temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors.


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