Surface segregation of highly branched polymer additives in linear hosts

2008 ◽  
Vol 46 (17) ◽  
pp. 1788-1801 ◽  
Author(s):  
Zhenyu Qian ◽  
Venkatachala S. Minnikanti ◽  
Lynden A. Archer
Keyword(s):  
Surface Segregation ◽  
Polymer Additives ◽  
Branched Polymer

Analysis of Surface Segregation of Bottlebrush Polymer Additives in Thin Film Blends with Attractive Intermolecular Interactions

2020 ◽  
Vol 53 (15) ◽  
pp. 6720-6730
Author(s):  
Kazuma Miyagi ◽  
Hao Mei ◽  
Tanguy Terlier ◽  
Gila E. Stein ◽  
Rafael Verduzco
Keyword(s):  
Thin Film ◽  
Intermolecular Interactions ◽  
Surface Segregation ◽  
Polymer Additives

Surface segregation of a branched polymer with hydrophilic poly[2-(2-ethoxy)ethoxyethyl vinyl ether] side chains

2017 ◽  
Vol 8 (3) ◽  
pp. 505-510 ◽  
Author(s):  
Shin Sugimoto ◽  
Yukari Oda ◽  
Toyoaki Hirata ◽  
Ruriko Matsuyama ◽  
Hisao Matsuno ◽  
...  
Keyword(s):  
Vinyl Ether ◽  
Surface Segregation ◽  
Side Chains ◽  
Branched Polymer ◽  
Preferential Segregation ◽  
Surface Construction

A branched polymer with hydrophilic side chains was designed and prepared for anti-biofouling surface construction through its preferential segregation.

Time-of-flight secondary ion mass spectrometry of bulk polymers using patterned silver overlayers to enhance the molecular microanalysis of trace additives

1992 ◽  
Vol 50 (2) ◽  
pp. 1552-1553
Author(s):  
M. P. Mawn ◽  
R. W. Linton ◽  
A. Benninghoven
Keyword(s):  
Mass Spectrometry ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Polymer Additives ◽  
Mass Analyzer ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

When coupled to a time-of-flight (TOF) mass analyzer which provides a high transmission, quasi-simultaneous detection of secondary ions, and theoretically unlimited mass range, secondary ion mass spectrometry (SIMS) is well suited for submonolayer molecular analysis of solid surfaces. Additionally, molecular ion images may be obtained by using a focused primary ion beam rastered on the sample surface to provide lateral distributions of chemical species.TOF-SIMS has been shown effective at characterizing low level polymer additives such as UV absorbers, thermal stabilizers, anti-oxidants, and slip agents in polymer extracts deposited on roughened Ag substrates. Additionally, in-situ analysis of linear low density polyethylene (LLDPE) samples using TOF-SIMS has provided information on surface segregation and surface oxidation. The polymer extract analysis has the advantage of both preconcentrating the polymer additives, as well as providing enhanced ion yields through Ag canonization. However, the in-situ analysis is also a valuable approach since it alleviates the time consuming extraction procedure and provides information on additive surface segregation and oxidation.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

Surface segregation in model symmetric polyolefin diblock copolymer melts

1994 ◽  
Vol 4 (12) ◽  
pp. 2231-2248 ◽  
Author(s):  
Mohan Sikka ◽  
Navjot Singh ◽  
Frank S. Bates ◽  
Alamgir Karim ◽  
Sushil Satija ◽  
...  
Keyword(s):  
Diblock Copolymer ◽  
Surface Segregation ◽  
Copolymer Melts

XPS study of the chemisorption induced surface segregation in LaNi5 and ThNi5

1981 ◽  
Vol 42 (7) ◽  
pp. 1025-1028 ◽  
Author(s):  
L. Schlapbach ◽  
C.R. Brundle
Keyword(s):  
Surface Segregation ◽  
Xps Study

Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?

2002 ◽  
Vol 716 ◽  
Author(s):  
Victor I. Kol'dyaev
Keyword(s):  
Surface Segregation ◽  
Initial Conditions ◽  
Initial Condition ◽  
Basic Assumptions ◽  
Transient Diffusion ◽  
Segregation Process ◽  
Main Observation

AbstractIt is accepted that surface Ge atoms are considered to be responsible for the surface B segregation process. A set of original experiments is carried out. A main observation from the B and Ge profiles grown at different conditions shows that at certain conditions B is taking initiative and determine the Ge surface segregation process. basic assumptions are suggested to self-consistently explain these original experimental features and what is observed in the literature. These results have a strong implication for modeling the B diffusion in Si1-xGex where the initial conditions should be formulated accounting for the correlation in B and Ge distribution. A new assumption for the initial condition to be “all B atoms are captured by Ge” is regarded as a right one implicating that there is no any transient diffusion representing the B capturing kinetics.

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