Energy-level alignment at metal-organic and organic-organic interfaces

2003 ◽  
Vol 41 (21) ◽  
pp. 2549-2560 ◽  
Author(s):  
S. C. Veenstra ◽  
H. T. Jonkman
2015 ◽  
Vol 17 (3) ◽  
pp. 1530-1548 ◽  
Author(s):  
M. Willenbockel ◽  
D. Lüftner ◽  
B. Stadtmüller ◽  
G. Koller ◽  
C. Kumpf ◽  
...  

What do energy level alignments at metal–organic interfaces reveal about the metal–molecule bonding strength?


2009 ◽  
Vol 21 (14-15) ◽  
pp. 1450-1472 ◽  
Author(s):  
Slawomir Braun ◽  
William R. Salaneck ◽  
Mats Fahlman

2013 ◽  
Vol 102 (22) ◽  
pp. 223301 ◽  
Author(s):  
Linda Lindell ◽  
Deniz Çakır ◽  
Geert Brocks ◽  
Mats Fahlman ◽  
Slawomir Braun

2015 ◽  
Vol 1 (10) ◽  
pp. e1501127 ◽  
Author(s):  
Martin Oehzelt ◽  
Kouki Akaike ◽  
Norbert Koch ◽  
Georg Heimel

Today’s champion organic (opto-)electronic devices comprise an ever-increasing number of different organic-semiconductor layers. The functionality of these complex heterostructures largely derives from the relative alignment of the frontier molecular-orbital energies in each layer with respect to those in all others. Despite the technological relevance of the energy-level alignment at organic heterointerfaces, and despite continued scientific interest, a reliable model that can quantitatively predict the full range of phenomena observed at such interfaces is notably absent. We identify the limitations of previous attempts to formulate such a model and highlight inconsistencies in the interpretation of the experimental data they were based on. We then develop a theoretical framework, which we demonstrate to accurately reproduce experiment. Applying this theory, a comprehensive overview of all possible energy-level alignment scenarios that can be encountered at organic heterojunctions is finally given. These results will help focus future efforts on developing functional organic interfaces for superior device performance.


1999 ◽  
Author(s):  
Kazuhiko Seki ◽  
Hiroshi Oji ◽  
Eisuke Ito ◽  
Naoki Hayashi ◽  
Yukio Ouchi ◽  
...  

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