Atom-transfer radical grafting polymerization of 2-methacryloyloxyethyl phosphorylcholine from silicon wafer surfaces

2004 ◽  
Vol 42 (12) ◽  
pp. 2931-2942 ◽  
Author(s):  
Wei Feng ◽  
John Brash ◽  
Shiping Zhu
Keyword(s):  
Silicon Wafer ◽  
Atom Transfer ◽  
Grafting Polymerization ◽  
Wafer Surfaces

Experimental Observation of Fractal-Regular Surfaces and a Transformation Scheme for Extracting Fractal Parameters

2005 ◽  
Author(s):  
Shao Wang ◽  
Wai Kin Chan
Keyword(s):  
Silicon Wafer ◽  
Roughness Parameter ◽  
Hard Disk ◽  
Spectral Density Function ◽  
Power Spectral ◽  
Fractal Parameters ◽  
Asperity Contacts ◽  
Fractal Roughness ◽  
Magnetic Hard Disk ◽  
Wafer Surfaces

To account for the effects of asperity contacts at various length scales, it is appropriate to characterize an engineering surface as a fractal-regular surface. In spite of significant theoretical advancement, there is a desperate need for experimental verification of the theory of fractal-regular surfaces and a consistent scheme of obtaining the fractal parameters. In the present study, the existence of a fractal region and a regular-shape region in the power spectral density function for fractal-regular surfaces was confirmed experimentally, for the first time, with data obtained from magnetic hard disk and silicon wafer surfaces. A novel scheme involving a variable transformation was developed to extract fractal parameters. This scheme was validated by accurate recovery of fractal parameters from simulated surfaces. The fractal dimension, the fractal roughness parameter and the fractal domain length were found for magnetic hard disk and silicon wafer surfaces.

High Sensitivity Optical Detection of Oriented Microdefects on Silicon Wafer Surfaces Using Annular Illumination

CIRP Annals ◽  
2001 ◽  
Vol 50 (1) ◽  
pp. 389-392 ◽  
Author(s):  
Takashi Miyoshi ◽  
Satoru Takahashi ◽  
Yasuhiro Takaya ◽  
Shoichi Shimada
Keyword(s):  
Silicon Wafer ◽  
Optical Detection ◽  
High Sensitivity ◽  
Wafer Surfaces

A Boost-Up Method of MEMS-Bulk-Micromachining towards C-MEMS Fabrication for Sensing and Manipulating Bioparticles

2011 ◽  
Vol 316-317 ◽  
pp. 59-67
Author(s):  
M. Rizwan Malik ◽  
Tie Lin Shi ◽  
Zi Rong Tang ◽  
M. Haseeb
Keyword(s):  
Silicon Wafer ◽  
Three Dimensional ◽  
Wafer Surface ◽  
Main Concern ◽  
Mems Fabrication ◽  
Technological Field ◽  
Broad Concept ◽  
Silicon Cantilever ◽  
Wafer Surfaces ◽  
Comprehensive Study

Much of the recent ongoing advanced research into the quest for improved etching techniques has brought forth a broad concept for the fabrication of micro/nano-electromechanical systems (MEMS/NEMS) having high accuracy, precision, efficiency, compatibility and through-put of metallic- as well as carbon-composition structural phases. This in turn leads towards a thorough understanding of the sensing, trapping, separating, controlling, positioning, directing, concentrating and manipulating of micro-nano-sized particles - predominantly biological particles - in the emerging MEMS/NEMS technological field. This paper focuses its attention on the easiest means of wet-etching {100}-type silicon wafer surfaces by guiding the choice of [<100> or <010>] orientation (at 45° to the normal orientation). This anisotropic etching is performed in KOH solution. Here, consideration is not concerned to a large extent with process parameters as in anodic oxidation, an intensely doped boron etching stops and silicon wafer surface back-etching. The main concern of the present practical application route involves a passivating material (silicon dioxide, SiO2) and two masking stages (for a two-step etching process). As a example of this method, silicon cantilever beams having vertical edges are produced. It is concluded that the method presented will be helpful in the comprehensive study of resonators, pressure/temperature sensors, three-dimensional carbon micro-electrodes, actuators and accelerometers for bioparticle applications.

Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
D. Imafuku ◽  
W. Mizubayashi ◽  
S. Miyazaki ◽  
M. Hirose ◽  
Y. Wakayama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Degradation Mechanism ◽  
Gate Oxide ◽  
Contamination Level ◽  
Degradation Behavior ◽  
Clean Room ◽  
Organic Contamination ◽  
Organic Adsorbates ◽  
Wafer Surfaces ◽  
Dielectric Degradation

ABSTRACTOrganic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

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