Description of covalent bond orders using the charge density topology

2003 ◽  
Vol 16 (2) ◽  
pp. 133-141 ◽  
Author(s):  
Siân T. Howard ◽  
Olivier Lamarche
2018 ◽  
Vol 24 (8) ◽  
Author(s):  
Ying Huang ◽  
Lianghong Liu ◽  
Chunying Rong ◽  
Tian Lu ◽  
Paul W. Ayers ◽  
...  
Keyword(s):  

2008 ◽  
Vol 10 (33) ◽  
pp. 5144 ◽  
Author(s):  
Diego R. Alcoba ◽  
Roberto C. Bochicchio ◽  
Luis Lain ◽  
Alicia Torre
Keyword(s):  

2011 ◽  
Vol 255-260 ◽  
pp. 2972-2976 ◽  
Author(s):  
Ping He ◽  
Jiang Wu ◽  
Xiu Min Jiang ◽  
Nai Chao Chen

Density-functional theory (DFT) theory is conducted for the structural and electronic features at the Hg/Al2O3 interface by the analysis of optimal structural geometry, partial density of states (PDOS) and difference charge density. The two adsorption sites of on-top and hollow locations according to the symmetry is adopted to construct the associated interfacial models between Hg atom and free surface. The calculated studies show that the oxygen atoms near Hg atom in the Al2O3 surface, for both on-top and hollow sites, have the gathering effect by shifting toward Hg atom. But their interacting electrons at the interface exhibit different statues in terms of the PDOS analysis that there have no evolution tendency to form the bond between associated O and Hg atoms at the on-top site; and the occurrence of Hg-5d and O-2p overlapping orbitals reveals the strong covalent bond existed at the interface. The PDOS curves show that Al atom in the surface is not liable to contribute to the formation of corresponding bonds by mixing its electrons with Hg atom. Meanwhile, the calculated results derived from difference charge density are in good agreement with the PDOS analysis. The calculated results support some advanced atomic investigation on design a new sorbent refined from fly gas, especially improving the mercury removal from the flue gas.


CrystEngComm ◽  
2017 ◽  
Vol 19 (28) ◽  
pp. 3898-3901 ◽  
Author(s):  
Krešimir Molčanov ◽  
Christian Jelsch ◽  
Emmanuel Wenger ◽  
Jernej Stare ◽  
Anders Ø. Madsen ◽  
...  

Charge density of the Zundel cation in the solid state reveals a covalent nature of its central O–H–O fragment.


1996 ◽  
Vol 74 (6) ◽  
pp. 1229-1235 ◽  
Author(s):  
Mark Eberhart

A systematic study of the charge density topologies corresponding to a number of transition metal aluminides with the B2 structure indicates that unstable crystal structures are sometimes associated with uncharacteristic topologies. This observation invites the speculation that the "distance" to a topological instability might relate to a metals phase behavior. Following this speculation, a metric is imposed on the topological theory of Bader, producing a geometrical theory, where it is now possible to assign a distance from a calculated charge density topology to a topological instability. For the cubic transition metals, these distances are shown to correlate with single crystal elastic constants, where the metals that are furthest from an instability are observed to be the stiffest. Key words: crystal structure, charge density topology, mechanical properties, brittle/ductile failure.


2014 ◽  
Vol 971-973 ◽  
pp. 77-80 ◽  
Author(s):  
Fu Chun Zhang ◽  
Ying Gao ◽  
Hong Wei Cui ◽  
Xing Xiang Ruan ◽  
Wei Hu Zhang

To study the geometrical and electronic structure of 15R-SiC polytypes, the lattice parameter, band structure, density of states (DOS) and charge density of 15R-SiC are calculated by using density functional theory based on the plane wave pseudopotential approach, and electronic structure and ground properties of 15R-SiC are investigated by the calculated band structure and DOS, the results show that 15R-SiC is an indirect band gap semiconductor, with calculated indirect band gap width being 2.16 eV and band gap dependent on Si 3p and C 2p states. While charge density results show that Si-C bond is a hybrid bond semiconductor strong in covalent bond and weak in ionicity, characterized by intense sp3 hybrid characteristics, which is in accordance with the experimental results. The above mentioned results are considered as theoretical reference for design and application of SiC polytype materials.


2021 ◽  
Vol 125 (14) ◽  
pp. 7959-7970
Author(s):  
Peter C. Müller ◽  
Christina Ertural ◽  
Jan Hempelmann ◽  
Richard Dronskowski

IUCrJ ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 635-646 ◽  
Author(s):  
Khidhir Alhameedi ◽  
Amir Karton ◽  
Dylan Jayatilaka ◽  
Sajesh P. Thomas

The question of whether intermolecular interactions in crystals originate from localized atom...atom interactions or as a result of holistic molecule...molecule close packing is a matter of continuing debate. In this context, the newly introduced Roby–Gould bond indices are reported for intermolecular `σ-hole' interactions, such as halogen bonding and chalcogen bonding, and compared with those for hydrogen bonds. A series of 97 crystal systems exhibiting these interaction motifs obtained from the Cambridge Structural Database (CSD) has been analysed. In contrast with conventional bond-order estimations, the new method separately estimates the ionic and covalent bond indices for atom...atom and molecule...molecule bond orders, which shed light on the nature of these interactions. A consistent trend in charge transfer from halogen/chalcogen bond-acceptor to bond-donor groups has been found in these intermolecular interaction regionsviaHirshfeld atomic partitioning of the electron populations. These results, along with the `conservation of bond orders' tested in the interaction regions, establish the significant role of localized atom...atom interactions in the formation of these intermolecular binding motifs.


2007 ◽  
Vol 63 (1) ◽  
pp. 142-150 ◽  
Author(s):  
Vladimir G. Tsirelson ◽  
Ekaterina V. Bartashevich ◽  
Adam I. Stash ◽  
Vladimir A. Potemkin

We present an approach for the determination of covalent bond orders from the experimental electron density and its derivatives at the bond critical points. An application of this method to a series of organic compounds has shown that it provides a bonding quantification that is in reasonable agreement with that obtained by orbital theory. The `experimental' atomic valence indices are also defined and their significance for the characterization of chemical problems is discussed.


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