Influence of precursor layer ablation on laser doping of silicon

2010 ◽  
Vol 18 (5) ◽  
pp. 334-339 ◽  
Author(s):  
J. R. Köhler ◽  
S. Eisele
Keyword(s):  
Laser Doping ◽  
Precursor Layer

Gas immersion laser doping (GILD) for ultra-shallow junction formation

2004 ◽  
Vol 453-454 ◽  
pp. 106-109 ◽  
Author(s):  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
M. Hernandez ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Laser Doping ◽  
Junction Formation

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors

Laser doping of Sb into ZnO nanowires in the Sb nanoparticle-dispersed liquid

2015 ◽  
Vol 119 (3) ◽  
pp. 463-467 ◽  
Author(s):  
Hirotaka Kawahara ◽  
Tetsuya Shimogaki ◽  
Mitsuhiro Higashihata ◽  
Hiroshi Ikenoue ◽  
Daisuke Nakamura ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Laser Doping

scholarly journals High Quality Passivation Scheme Combined with Laser Doping from SiN:P and SiN:B Layer for Silicon Solar Cell

2012 ◽  
Vol 27 ◽  
pp. 467-473 ◽  
Author(s):  
S. Gall ◽  
B. Paviet-Salomon ◽  
J. Lerat ◽  
T. Emeraud
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Quality ◽  
Laser Doping

Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques

2006 ◽  
Vol 45 (4B) ◽  
pp. 3516-3518 ◽  
Author(s):  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
Hsin-Yuan Mao ◽  
Bing-Rui Wu ◽  
Yen-Chia Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Hot Wire ◽  
Laser Doping ◽  
Si Thin Film

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

2005 ◽  
Vol 487 (1-2) ◽  
pp. 232-236 ◽  
Author(s):  
A. Di Gaspare ◽  
L. Mariucci ◽  
A. Pecora ◽  
G. Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Doping ◽  
Doping Technique

scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

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