Theory and experiments on the back side reflectance of silicon wafer solar cells

2007 ◽  
Vol 16 (1) ◽  
pp. 1-15 ◽  
Author(s):  
Daniel Kray ◽  
Martin Hermle ◽  
Stefan W. Glunz
2018 ◽  
Vol 410 ◽  
pp. 369-375 ◽  
Author(s):  
Yaoju Zhang ◽  
Jun Zheng ◽  
Xuesong Zhao ◽  
Xiukai Ruan ◽  
Guihua Cui ◽  
...  

2017 ◽  
Vol 56 (8S2) ◽  
pp. 08MB17 ◽  
Author(s):  
Mei Huang ◽  
Armin G. Aberle ◽  
Thomas Mueller

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 287-291 ◽  
Author(s):  
Jaffar Moideen Yacob Ali ◽  
Vinodh Shanmugam ◽  
Bianca Lim ◽  
Armin G. Aberle ◽  
Thomas Mueller

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 763
Author(s):  
Eugenia Bobeico ◽  
Lucia V. Mercaldo ◽  
Pasquale Morvillo ◽  
Iurie Usatii ◽  
Marco Della Noce ◽  
...  

Substoichiometric molybdenum oxide (MoOx) has good potential as a hole-collecting layer in solar cells. In this paper, we report on the application of ultrathin evaporated MoOx as a hole collector at the back side of two distinct photovoltaic technologies: polymeric and silicon heterojunction (SHJ). In the case of polymer solar cells, we test MoOx as a hole transport layer in devices with inverted architecture. The higher transparency of the MoOx film, compared to the commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), allows an enhanced back reflected light into the photoactive layer, thus boosting the photogeneration, as found from the illuminated J-V and external quantum efficiency (EQE) curves. The higher fill factor (FF) of the MoOx-based device also suggests an improved charge collection efficiency compared to the cells with PEDOT:PSS. As for SHJ solar cells, we show that MoOx offers the means for dopant-free hole collection with both p-type and n-type Si wafers. In the present comparison over planar test structures with Ag back reflecting electrodes, we observe an efficiency gain of approximately 1% absolute against a baseline with a conventional p-type amorphous silicon hole collector. The gain is linked to the increased VOC, which is likely due to the reduced recombination at the Si wafer.


Author(s):  
Abhishek Kumar ◽  
Nikhil Dhawan

Carbon nanotube bundles were precisely grown atop a p-type silicon wafer that had been treated with catalysts to produce geometries that resemble three-dimensional nano-models to extract more power from the sun. The embedded carbon nanotubes bundles on silicon wafer promise more opportunity for each photon of sunlight to interact with resulting solar cell, as a result of increase of surface area available to produce electricity. The paper discusses morphology of grown nanotubes on silicon wafer along with future prospects of Si-CNTs fabricated solar cells.


2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Enyu Wang ◽  
He Wang ◽  
Hong Yang

At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.


Sign in / Sign up

Export Citation Format

Share Document