scholarly journals Resistive loading of photovoltaic modules and arrays for long-term exposure testing

2006 ◽  
Vol 14 (6) ◽  
pp. 567-575 ◽  
Author(s):  
C. R. Osterwald ◽  
J. Adelstein ◽  
J. A. del Cueto ◽  
W. Sekulic ◽  
D. Trudell ◽  
...  
Keyword(s):  
Photovoltaic Modules ◽  
Resistive Loading ◽  
Exposure Testing

scholarly journals Analysis of thin film photovoltaic modules under outdoor long term exposure in semi-arid climate conditions

Solar Energy ◽  
2017 ◽  
Vol 157 ◽  
pp. 587-595 ◽  
Author(s):  
Ali Tahri ◽  
Santiago Silvestre ◽  
Fatima Tahri ◽  
Soumia Benlebna ◽  
Aissa Chouder
Keyword(s):  
Thin Film ◽  
Arid Climate ◽  
Climate Conditions ◽  
Photovoltaic Modules ◽  
Semi Arid

scholarly journals Mechanical Degradation Analysis of an Amorphous Silicon Solar Module

Energies ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 4126
Author(s):  
Gilbert Osayemwenre ◽  
Edson Meyer
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Adhesion Force ◽  
Structural Defects ◽  
Mechanical Degradation ◽  
Solar Module ◽  
Photovoltaic Modules ◽  
Degradation Analysis ◽  
Defective Region

This work examines the degradation of photovoltaic modules. It assesses the structural defects of amorphous silicon solar cells, which result from mechanical stress at nanoscale level. Firstly, it analyses the interface morphology, deformation, and internal delamination of a single junction amorphous silicon solar module. Secondly, it explores the interface deformation of the layers of the defective region of the module with some statistical tools including root mean root (RSM) and arithmetic mean (Rq). It used the aforementioned tools to demonstrate the effect of microstructural defects on the mechanical behaviour of the entire layers of the module. The study established that the defect observed in the module, emanated from long-term degradation of the a-Si solar cells after years of exposure to various light and temperature conditions. It tested the mechanism of mechanical degradation and its effect on the reliability and stability of the defective and non-defective regions of the module with adhesion force characterisation.

scholarly journals Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

Data in Brief ◽  
2016 ◽  
Vol 7 ◽  
pp. 366-371 ◽  
Author(s):  
Sofiane Kichou ◽  
Santiago Silvestre ◽  
Gustavo Nofuentes ◽  
Miguel Torres-Ramírez ◽  
Aissa Chouder ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Behavioral Data ◽  
Single Junction ◽  
Photovoltaic Modules

Long-term leaching of photovoltaic modules

2017 ◽  
Vol 56 (8S2) ◽  
pp. 08MD02 ◽  
Author(s):  
Jessica Nover ◽  
Renate Zapf-Gottwick ◽  
Carolin Feifel ◽  
Michael Koch ◽  
Jörg W. Metzger ◽  
...  
Keyword(s):  
Photovoltaic Modules

scholarly journals Model for Staebler-Wronski Degradation Deduced from Long-Term, Controlled Light-Soaking Experiments

2000 ◽  
Vol 609 ◽  
Author(s):  
Bolko von Roedern ◽  
Joseph A. del Cueto
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Operating Conditions ◽  
Degradation Mechanisms ◽  
Time Constants ◽  
Photovoltaic Modules ◽  
History Of ◽  
Exposure History ◽  
Operating History

ABSTRACTLong-term light-soaking experiments of amorphous silicon photovoltaic modules have now established that stabilization of the degradation occurs at levels that depend significantly on the operating conditions, as well as on the operating history of the modules. We suggest that stabilization occurs because of the introduction of degradation mechanisms with different time constants and annealing activation energies, depending on the exposure conditions. Stabilization will occur once a sufficient accumulation of different degradation mechanisms occurs. We find that operating module temperature during light-soaking is the most important parameter for determining stabilized performance. Next in importance is the exposure history of the device. The precise value of the light intensity seems least important in determining the stabilized efficiency, as long as its level is a significant fraction of 1-sun.

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