High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)

2003 ◽  
Vol 11 (7) ◽  
pp. 437-443 ◽  
Author(s):  
N. Naghavi ◽  
S. Spiering ◽  
M. Powalla ◽  
B. Cavana ◽  
D. Lincot
Keyword(s):  
High Efficiency ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Indium Sulfide ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Cigs Solar Cells ◽  
Copper Indium Gallium

Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells

2001 ◽  
Vol 668 ◽  
Author(s):  
F. Donsanti ◽  
B. Weinberger ◽  
P. Cowache ◽  
M. C. Bernard ◽  
D. Lincot
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Flat Band ◽  
Indium Sulfide ◽  
Copper Indium Gallium Diselenide ◽  
Quantum Size ◽  
Layer Deposition ◽  
Copper Indium ◽  
Copper Indium Gallium

ABSTRACTGrowth and properties of indium sulfide layers (< 300 nm) prepared by atomic layer deposition (ALD) have been studied. Growth rate of about 0.6 A per cycle has been measured for films deposited at 160°C from indium acetylacetonate and hydrogen sulfide precursors. The films are crystalline with the β modification. They possess high band gap values (2.7-2.8 eV) which are related to small grain sizes (3-4 nm) through quantum size effects. Electrical properties have been addressed using the semiconductor electrolyte junction. They are n type with a doping level around 1016 cm−3 and possess a good blocking behavior under reverse bias. The flat band potential is close to -1 V vs MSE. These figures are close to those measured under similar conditions with CdS CBD buffer layers and could explain the good cell performances obtained with ALD In2S3.

High-efficiency, Cd-free copper–indium–gallium–diselenide/polymer hybrid solar cells

2007 ◽  
Vol 91 (9) ◽  
pp. 807-812 ◽  
Author(s):  
Vignesh Gowrishankar ◽  
Christine K. Luscombe ◽  
Michael D. McGehee ◽  
Jean M.J. Fréchet
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Hybrid Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Polymer Hybrid ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Towards Better Understanding of High Efficiency Cd-free CIGS Solar Cells Using Atomic Layer Deposited Indium Sulfide Buffer Layers

2003 ◽  
Vol 763 ◽  
Author(s):  
N. Naghavi ◽  
S. Spiering ◽  
M. Powalla ◽  
B. Canava ◽  
A. Taisne ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Diffusion Processes ◽  
Atomic Layer ◽  
Open Circuit ◽  
Buffer Layers ◽  
Atomic Diffusion ◽  
Indium Sulfide ◽  
Cigs Thin Film ◽  
Cigs Solar Cells

AbstractThis paper presents optimization studies on the formation of cadmium free buffer layers for high efficiency copper indium diselenide (CIGS) thin film solar cells using a vapor phase route. Indium sulfide layers have been deposited on CIGS substrates by Atomic Layer Deposition (ALD) at substrate temperatures between 140 and 260 °C using indium acetylacetonate and hydrogen sulfide precursors. The parametric study of the deposition temperature shows an optimal value at about 220°C, leading to an efficiency of 16.4 % which is a technological breakthrough. The analysis of the device shows that indium sulfide layers give an improvement of the blue response of the cells as compared a standard CdS processed cell, due to a high apparent band gap (2.7-2.8 eV), higher open circuit voltages (up to 665 mV) and fill factor (78 %). This denotes high interface quality of the system. Atomic diffusion processes of sodium and copper in the buffer layer are evidenced.

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