scholarly journals LeTID mitigation via an adapted firing process in p‐type PERC cells from SMART cast‐monocrystalline, Czochralski and high‐performance multicrystalline silicon

2021 ◽  
Author(s):  
Felix Maischner ◽  
Stephan Maus ◽  
Johannes Greulich ◽  
Sabrina Lohmüller ◽  
Elmar Lohmüller ◽  
...  
Keyword(s):  
High Performance ◽  
Multicrystalline Silicon ◽  
Firing Process ◽  
P Type

Full recovery of red zone in p-type high-performance multicrystalline silicon

2017 ◽  
Vol 173 ◽  
pp. 120-127 ◽  
Author(s):  
Ville Vähänissi ◽  
Hannu S. Laine ◽  
Zhengjun Liu ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
...  
Keyword(s):  
High Performance ◽  
Full Recovery ◽  
Multicrystalline Silicon ◽  
P Type

scholarly journals High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells

Solar Energy ◽  
2018 ◽  
Vol 175 ◽  
pp. 68-74 ◽  
Author(s):  
Pietro P. Altermatt ◽  
Zhen Xiong ◽  
QiuXiang He ◽  
WeiWei Deng ◽  
Feng Ye ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Multicrystalline Silicon ◽  
P Type

Recombination sources in p-type high performance multicrystalline silicon

2017 ◽  
Vol 56 (8S2) ◽  
pp. 08MB16 ◽  
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Peiting Zheng ◽  
Quanzhi Wang ◽  
Wei Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Multicrystalline Silicon ◽  
P Type

High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs

1998 ◽  
Vol 34 (19) ◽  
pp. 1888 ◽  
Author(s):  
G. Höck ◽  
T. Hackbarth ◽  
U. Erben ◽  
E. Kohn ◽  
U. König
Keyword(s):  
High Performance ◽  
P Type

P-type Co3O4 nanoarrays decorated on the surface of n-type flower-like WO3 nanosheets for high-performance gas sensing

2019 ◽  
Vol 288 ◽  
pp. 104-112 ◽  
Author(s):  
Yanghai Gui ◽  
Lele Yang ◽  
Kuan Tian ◽  
Hongzhong Zhang ◽  
Shaoming Fang
Keyword(s):  
High Performance ◽  
Gas Sensing ◽  
P Type ◽  
Co3o4 Nanoarrays

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Sign in / Sign up

Export Citation Format

Share Document