Prediction of local temperature‐dependent performance of silicon solar cells

2019 ◽  
Vol 27 (11) ◽  
pp. 999-1006 ◽  
Author(s):  
Rebekka Eberle ◽  
Andreas Fell ◽  
Sven Mägdefessel ◽  
Florian Schindler ◽  
Martin C. Schubert
2015 ◽  
Vol 77 ◽  
pp. 639-645 ◽  
Author(s):  
Rune Søndenå ◽  
Charly Berthod ◽  
Jan Ove Odden ◽  
Anne-Karin Søiland ◽  
Marie Syre Wiig ◽  
...  

2021 ◽  
Vol 225 ◽  
pp. 111020
Author(s):  
Anh Huy Tuan Le ◽  
Rabin Basnet ◽  
Di Yan ◽  
Wenhao Chen ◽  
Naomi Nandakumar ◽  
...  

2017 ◽  
Vol 26 (4) ◽  
pp. 303-309
Author(s):  
Shuai Li ◽  
Guanhua Lin ◽  
Yang Li ◽  
Zhen Li ◽  
Wenxiu Gao ◽  
...  

Author(s):  
Rebekka Eberle ◽  
Andreas Fell ◽  
Armin Richter ◽  
Tim Niewelt ◽  
Florian Schindler ◽  
...  

2007 ◽  
Vol 989 ◽  
Author(s):  
Johannes Meier ◽  
Ulrich Kroll ◽  
Stefano Benagli ◽  
Tobias Roschek ◽  
Andreas Huegli ◽  
...  

AbstractIn this paper an overview of our developments towards industrialization of thin film silicon PV modules is presented. Amorphous silicon p-i-n solar cells have been developed in medium size single-chamber R&D KAI-M PECVD reactors. High initial efficiencies of 10.6 % and stabilized of 8.6 % could be achieved for a 1 cm2 a-Si:H p-i-n solar cell of 0.20 m thick i-layer deposited on TCO from Asahi U type (SnO2). On our in-house developed LPCVD ZnO we could further improve the stabilized a-Si:H p-i-n efficiency to a similar level of 8.5 %. Incorporating such cells in commercial available front TCO of lower quality still leads to high initial mini-module aperture efficiencies (10 × 10 cm2) of 9.1% and stabilized ones of 7.46% (independently measured by ESTI JRC-Ispra).Transferring the processes from the KAI-M to the industrial size 1.1×1.25 m2 KAI-1200 R&D reactors resulted in a-Si:H modules of 110.6 W using commercial TCO, respectively 112.4 W when applying in-house developed LPCVD front ZnO. Both initial module performances have been independently measured by ESTI laboratories of JRC Ispra. A typical temperature coefficient for the module power of -0.22 %/°C (relative loss) has been deduced from temperature dependent I-V characteristics at ESTI laboratories of JRC Ispra. Finally, micromorph mini-modules of 10 % initial aperture efficiency have been fabricated.


2017 ◽  
Vol 7 (2) ◽  
pp. 450-457 ◽  
Author(s):  
Heiko Steinkemper ◽  
Ino Geisemeyer ◽  
Martin C. Schubert ◽  
Wilhelm Warta ◽  
Stefan W. Glunz

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Meier ◽  
H. Keppner ◽  
S. Dubail ◽  
U. Kroll ◽  
P. Torres ◽  
...  

ABSTRACTHigher open circuit voltages of the microcrystalline silicon bottom cell have a direct impact on the efficiency of the micromorph (μc-Si:H/a-Si:H) tandem cell. In this paper it is shown that open circuit voltages over 500 mV can be achieved leading to gc-Si:H cell efficiencies of 8.5 %. The behaviour of such cells is characterised both by the illuminated and the dark I-V characteristics in function of cell temperature. Microcrystalline cells with Voc-values higher than 500 mV and micromorph tandems possess in general a lower value of the temperature coefficient of the fill factor and thus of the efficiency, when compared to c-Si. Temperature-dependent dark I-V measurements suggest that the dominant recombination mechanism in lgc-Si:H cells is different from that prevailing in a-Si:H solar cells.


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