The effects of intraband and interband carrier‐carrier scattering on hot‐carrier solar cells: A theoretical study of spectral hole burning, electron‐hole energy transfer, Auger recombination, and impact ionization generation

2019 ◽  
Vol 27 (5) ◽  
pp. 433-452 ◽  
Author(s):  
Chin‐Yi Tsai
2018 ◽  
Vol 23 (07) ◽  
pp. 1 ◽  
Author(s):  
Jacqueline Gunther ◽  
Andreas Walther ◽  
Lars Rippe ◽  
Stefan Kröll ◽  
Stefan Andersson-Engels

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


2021 ◽  
Vol 104 (1) ◽  
Author(s):  
Jia-Bin You ◽  
Xiao Xiong ◽  
Ping Bai ◽  
Zhang-Kai Zhou ◽  
Wan-Li Yang ◽  
...  

2021 ◽  
Vol 154 (12) ◽  
pp. 124904
Author(s):  
Satish Chandra Hari Mangalara ◽  
Shreejaya Paudel ◽  
Gregory B. McKenna

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