Quantifying and modeling the impact of interconnection failures on the electrical performance of crystalline silicon photovoltaic modules

2019 ◽  
Vol 27 (5) ◽  
pp. 424-432 ◽  
Author(s):  
Eleonora Annigoni ◽  
Alessandro Virtuani ◽  
Jacques Levrat ◽  
Antonin Faes ◽  
Fanny Sculati‐Meillaud ◽  
...  
2017 ◽  
Vol 12 (21) ◽  
pp. 286-294
Author(s):  
Faye Issa ◽  
Ndiaye Ababacar ◽  
Kobor Diouma ◽  
Thiame Moustapha ◽  
Sene Cheickh ◽  
...  

2018 ◽  
Vol 8 (5) ◽  
pp. 1168-1173 ◽  
Author(s):  
Wei Luo ◽  
Peter Hacke ◽  
Saw Min Hsian ◽  
Yan Wang ◽  
Armin G. Aberle ◽  
...  

2019 ◽  
Vol 11 (17) ◽  
pp. 4697 ◽  
Author(s):  
Thamer Alquthami ◽  
Karim Menoufi

This article evaluates the impact of dust accumulation on the performance of photovoltaic (PV) modules in two different locations inside Egypt, Cairo and Beni-Suef. Two identical PV modules were used for that purpose, where each module was exposed to the outdoor environment in order to collect dust naturally for a period of three weeks, each in its corresponding location. The approximate dust density on each of the two PV modules was estimated. Moreover, the electrical performance was evaluated and compared under the same indoor testing conditions. The results show a better electrical performance and less dust density for the PV module located in Cairo compared to that located in Beni-Suef. The results further provide an indication for the impact of soling in different locations within the same country through a clear and simple procedure. In addition, it paves the way for establishing a Photovoltaic Soiling Index (PVSI) in terms of a Photovoltaic Dust Coefficient, as well as a Photovoltaic Dust Interactive Map. The product of such concepts could be used by the Photovoltaic systems designers everywhere in order to estimate the impact of dust on the future performance of PV modules in small and large installations in different regions around the globe, and during different times of the year as well.


2020 ◽  
Vol 4 (41) ◽  
pp. 51-56
Author(s):  
DMITRIY STREBKOV ◽  
◽  
NATAL’YA FILIPPCHENKOVA ◽  

In the field of energy supply to agro-industrial facilities, there is an increasing interest in the development of structures and engineering systems using renewable energy sources, including solar concentrator thermal and photovoltaic modules that combine photovoltaic modules and solar collectors in one structure. The use of the technology of concentrator heat and photovoltaic modules makes it possible to increase the electrical performance of solar cells by cooling them during operation, and significantly reduces the need for centralized electricity and heat supply to enterprises of the agroindustrial complex. (Research purpose) The research purpose is in numerical modeling of thermal processes occurring in a solar concentrator heat-photovoltaic module. (Materials and methods) Authors used analytical methods for mathematical modeling of a solar concentrator heat and photovoltaic module. Authors implemented a mathematical model of a solar concentrator heat and photovoltaic module in the ANSYS Fluent computer program. The distribution contours of temperature and pressure of the coolant in the module channel were obtained for different values of the coolant flow rate at the inlet. The verification of the developed model of the module on the basis of data obtained in an analytical way has been performed. (Results and discussion) The results of comparing the calculated data with the results of computer modeling show a high convergence of the information obtained with the use of a computer model, the relative error is within acceptable limits. (Conclusions) The developed design of the solar concentrator heat and photovoltaic module provides effective cooling of photovoltaic cells (the temperature of photovoltaic cells is in the operating range) with a module service life of at least twenty-five years. The use of a louvered heliostat in the developed design of a solar concentrator heat and photovoltaic module can double the performance of the concentrator.


2021 ◽  
pp. 114236
Author(s):  
Mingyao Ma ◽  
Haisong Wang ◽  
Nianwen Xiang ◽  
Ping Yun ◽  
Hanyu Wang

2018 ◽  
pp. 61-102
Author(s):  
Pablo Dias ◽  
Pablo Dias ◽  
Hugo Veit

2019 ◽  
Vol 8 (12) ◽  
pp. N220-N233
Author(s):  
Mohammad Al-Mamun ◽  
Sean W. King ◽  
Marius Orlowski

A good candidate for replacing the inert platinum (Pt) electrode in the well-behaved Cu/TaOx/Pt resistive RAM memory cell is ruthenium (Ru), already successfully deployed in the CMOS back end of line. We benchmark Cu/TaOx/Ru device against Cu/TaOx/Pt and investigate the impact of embedment of Cu/TaOx/Ru on two different substrates, Ti(20nm)/SiO2(730nm)/Si and Ti(20nm)/TaOx(30nm)/SiO2(730nm)/Si, on the cell's electrical performance. While the devices show similar switching performance at some operating conditions, there are notable differences at other operation regimes shedding light on the basic switching mechanisms and the role of the inert electrode. The critical switching voltages are significantly higher for Ru than for Pt devices and can be partly explained by the work function difference and different surface roughness of the inert electrode. The poorer switching properties of the Ru device are attributed to the degraded inertness properties of the Ru electrode as a stopping barrier for Cu+ ions as compared to the Pt electrode. However, some of the degraded electrical properties of the Ru devices can be mitigated by an improved integration of the device on the Si wafer. This improvement is attributed to the suppression of crystallization of Ru and its silicidation reactions that take place at elevated local temperatures, present mainly during the reset operation. This hypothesis has been corroborated by extensive XRD studies of multiple layer systems annealed at temperatures between 300K and 1173K.


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