High open-circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero-interface by post-annealing treatment

2018 ◽  
Vol 27 (1) ◽  
pp. 37-43 ◽  
Author(s):  
Yuanfang Zhang ◽  
Jialiang Huang ◽  
Chang Yan ◽  
Kaiwen Sun ◽  
Xin Cui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Epitaxial Growth ◽  
Open Circuit Voltage ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Post Annealing

Efficient Thin Polymer Solar Cells with Post-Annealing

2007 ◽  
Vol 1031 ◽  
Author(s):  
Shun-Wei Liu ◽  
Chih-Chien Lee ◽  
Ping-Tsung Huang ◽  
Chin-Ti Chen ◽  
Juen-Kai Wang
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Annealing Process ◽  
Solar Cell Performance ◽  
Post Annealing ◽  
Thin Polymer ◽  
Before And After ◽  
Process Annealing

AbstractThe authors report the study of the dependence of the device performance of polymer solar cells based on single 50-nm heterojunction poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methylester (P3HT/PCBM) layer on annealing process. Annealing before and after cathode deposition were performed for comparison. In the case of post-annealing at 150¢XC for 60 min., the device attains a conversion efficiency of 4.9%, a fill factor of 53 %, and an open-circuit voltage of 0.67 V. These values are comparable with the highest values reported previously. The annealing process is expected to modify the network morphology of the P3HT/PCBM layer. This study demonstrates that it is possible to attain good solar cell performance with the combination of single thin active layer and post-annealing treatment. This may open up an opportunity to fabricate tandem polymer solar cells.

Post-annealing to recover the reduced open-circuit voltage caused by solvent annealing in organic solar cells

2016 ◽  
Vol 4 (16) ◽  
pp. 6158-6166 ◽  
Author(s):  
Yuanpeng Xie ◽  
Weihua Zhou ◽  
Jingping Yin ◽  
Xiaotian Hu ◽  
Lin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Solvent Annealing ◽  
Post Annealing

The tremendous loss in open-circuit voltage (Voc) upon solvent annealing in p-DTS(FBTTh2)2:PC71BM could be recovered by subsequent post-thermal annealing.

scholarly journals Screen printed carbon CsPbBr3 solar cells with high open-circuit photovoltage

2018 ◽  
Vol 6 (38) ◽  
pp. 18677-18686 ◽  
Author(s):  
Isabella Poli ◽  
Jenny Baker ◽  
James McGettrick ◽  
Francesca De Rossi ◽  
Salvador Eslava ◽  
...  
Keyword(s):  
Solar Cells ◽  
Mesoporous Carbon ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Porous Substrate ◽  
Cell Efficiency ◽  
Post Annealing ◽  
Different Temperatures ◽  
Open Circuit Photovoltage ◽  
Screen Printed

Mesoporous carbon solar cells were prepared by infiltrating the porous substrate with inorganic CsPbBr3 solution. The films were post-annealed at different temperatures; post-annealing at 400 °C strongly enhances the open circuit voltage (1.44 V) and cell efficiency (8.2%).

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

Importance of interfacial crystallinity to reduce open-circuit voltage loss in organic solar cells

2019 ◽  
Vol 115 (15) ◽  
pp. 153301 ◽  
Author(s):  
Seiichiro Izawa ◽  
Naoto Shintaku ◽  
Mitsuru Kikuchi ◽  
Masahiro Hiramoto
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Loss
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