scholarly journals A 3-in-1 doping process for interdigitated back contact solar cells exploiting the understanding of co-diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

2016 ◽  
Vol 24 (7) ◽  
pp. 955-967 ◽  
Author(s):  
Sebastian Gloger ◽  
Axel Herguth ◽  
Josh Engelhardt ◽  
Giso Hahn ◽  
Barbara Terheiden
Keyword(s):  
Solar Cells ◽  
Borosilicate Glass ◽  
Back Contact ◽  
Phosphorus Diffusion ◽  
Dopant Profiles

scholarly journals Screen‐Printed Borosilicate Glass Derived from Sol–Gel Materials for Back‐Contact Back‐Junction Solar Cells

Solar RRL ◽  
2020 ◽  
Vol 4 (10) ◽  
pp. 2000271
Author(s):  
Jonas D. Huyeng ◽  
Raphael Efinger ◽  
Roman J. Keding ◽  
Oliver Doll ◽  
Florian Clement
Keyword(s):  
Solar Cells ◽  
Borosilicate Glass ◽  
Sol Gel ◽  
Back Contact ◽  
Screen Printed

Optimized analysis of back-contact perovskite solar cells architectures

Optik ◽  
2020 ◽  
Vol 207 ◽  
pp. 164362 ◽  
Author(s):  
Guochuan Fang ◽  
Hanmin Tian ◽  
Weihong Chang ◽  
Zheng Wang ◽  
Quanmin He ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Back Contact

Engineering the Band Offsets at the Back Contact Interface for Efficient Kesterite CZTSSe Solar Cells

2020 ◽  
Vol 3 (11) ◽  
pp. 10976-10982
Author(s):  
Afei Zhang ◽  
Zhaoyang Song ◽  
Zhengji Zhou ◽  
Yueqing Deng ◽  
Wenhui Zhou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Contact Interface ◽  
Band Offsets

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-µm-Thick CdTe Thin Film Solar Cells

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 2834-2841 ◽  
Author(s):  
Nowshad Amin ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Back Contact ◽  
Cdte Thin Film

Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact

2016 ◽  
Vol 16 (5) ◽  
pp. 5053-5057 ◽  
Author(s):  
Qian Sun ◽  
Kyoung-Bo Kim ◽  
Chan-Wook Jeon
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Doped Zno

The effect of Mo back contact ageing on Cu(In,Ga)Se2 thin-film solar cells

2013 ◽  
Vol 22 (1) ◽  
pp. 83-89 ◽  
Author(s):  
Pedro M. P. Salomé ◽  
Viktor Fjallstrom ◽  
Adam Hultqvist ◽  
Piotr Szaniawski ◽  
Uwe Zimmermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Back Contact
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