scholarly journals Assessment of photovoltaic junction position using combined focused ion beam and electron beam‐induced current analysis of close space sublimation deposited CdTe solar cells

2014 ◽  
Vol 22 (10) ◽  
pp. 1096-1104 ◽  
Author(s):  
Jonathan Douglas Major ◽  
Leon Bowen ◽  
Robert Treharne ◽  
Ken Durose
2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.


Author(s):  
Frank Altmann ◽  
Jan Schischka ◽  
Vinh Van Ngo ◽  
Stacey Stone ◽  
Laurens F. Tz. Kwakman ◽  
...  

Abstract A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate the larger, electrically active defects reasonably fast on a large area, the FIB-SEM EBIC system is uniquely capable of detecting sub-micron, sub-surface defects and of analysing these defects in the same system. In combination with a FIB, the localized region of interest can be easily cross sectioned and additional EBIC analysis can be applied for a three dimensional analysis of the p/n junction.


2017 ◽  
Vol 633 ◽  
pp. 218-221 ◽  
Author(s):  
Benjamin Bissig ◽  
Martina Lingg ◽  
Carlos Guerra-Nunez ◽  
Romain Carron ◽  
Fabio La Mattina ◽  
...  

2015 ◽  
Vol 118 (24) ◽  
pp. 245705 ◽  
Author(s):  
S. I. Maximenko ◽  
M. P. Lumb ◽  
R. Hoheisel ◽  
M. Gonzalez ◽  
D. A. Scheiman ◽  
...  

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