The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation

2013 ◽  
Vol 22 (11) ◽  
pp. 1138-1146 ◽  
Author(s):  
A. Kanevce ◽  
D. H. Levi ◽  
D. Kuciauskas
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Drift Diffusion ◽  
Time Resolved ◽  
Cdte Solar Cells ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of CdTe solar cells

2003 ◽  
Vol 94 (5) ◽  
pp. 3549-3555 ◽  
Author(s):  
W. K. Metzger ◽  
D. Albin ◽  
D. Levi ◽  
P. Sheldon ◽  
X. Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Cdte Solar Cells ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

2021 ◽  
Author(s):  
Mohammad M. Taheri ◽  
Triet M. Truong ◽  
Shannon Fields ◽  
William N. Shafarman ◽  
Brian E. McCandless ◽  
...  
Keyword(s):  
Solar Cells ◽  
Terahertz Spectroscopy ◽  
Surface Recombination ◽  
Time Resolved ◽  
Cdte Solar Cells

scholarly journals Characterization of thin CdTe solar cells with a CdSeTe front layer

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2053-2062
Author(s):  
Alexandra M. Bothwell ◽  
Jennifer A. Drayton ◽  
Pascal M. Jundt ◽  
James R. Sites
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Alloy Layer ◽  
Time Resolved ◽  
Loss Analysis ◽  
Cdte Solar Cells ◽  
Close Space Sublimation ◽  
Device Structures ◽  
Electroluminescence Intensity ◽  
Time Resolved Photoluminescence

ABSTRACTThin CdTe photovoltaic device efficiencies show significant improvement with the incorporation of a CdSeTe alloy layer deposited between a MgZnO emitter and CdTe absorber. CdTe and CdSeTe/CdTe devices fabricated by close-space sublimation with a total absorber thickness of 1.5 µm are studied using microscopy measurements and show minimal diffusion of Se into the CdTe. Current loss analysis shows that the CdSeTe layer is the primary absorber in the CdSeTe/CdTe structure, and fill factor loss analysis shows that ideality-factor reduction is the dominant mechanism of fill factor loss. Improvement in the CdSeTe/CdTe absorber quality compared to CdTe is also reflected in spectral and time-resolved photoluminescence measurements. Current density vs. voltage measurements show an increase in current density of up to 2 mA/cm2 with the addition of CdSeTe due to a band gap shift from 1.5 to 1.42 eV for CdTe and CdSeTe/CdTe absorbers respectively. Voltage deficit is lower with the incorporation of the CdSeTe layer, corroborated by improved electroluminescence intensity. The addition of CdSeTe into CdTe device structures has increased device efficiencies from 14.7% to 15.6% for absorbers with a total thickness less than two microns.

Enhanced recombination next to laser-patterned lines in CIGSe solar cells revealed by spectral and time-resolved photoluminescence

2021 ◽  
Vol 536 ◽  
pp. 147721
Author(s):  
Christof Schultz ◽  
Andreas Bartelt ◽  
Cornelia Junghans ◽  
Wolfgang Becker ◽  
Rutger Schlatmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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