Towards ultrathin copper indium gallium diselenide solar cells: proof of concept study by chemical etching and gold back contact engineering

2012 ◽  
Vol 20 (5) ◽  
pp. 582-587 ◽  
Author(s):  
Zacharie Jehl Li-Kao ◽  
Negar Naghavi ◽  
Felix Erfurth ◽  
Jean François Guillemoles ◽  
Isabelle Gérard ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Back Contact ◽  
Proof Of Concept ◽  
Copper Indium Gallium Diselenide ◽  
Concept Study ◽  
Copper Indium ◽  
Indium Gallium ◽  
Contact Engineering ◽  
Copper Indium Gallium

scholarly journals Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
S. Ouédraogo ◽  
F. Zougmoré ◽  
J. M. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Short Circuit ◽  
Hole Density ◽  
Back Contact ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

We used a one-dimensional simulation program Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) to investigate Copper-Indium-Gallium-Diselenide- (CIGS-) based solar cells properties. Starting with a conventional ZnO-B/i-ZnO/CdS/CIGS structure, we simulated the parameters of current-voltage characteristics and showed how the absorber layer thickness, hole density, and band gap influence the short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and efficiency of solar cell. Our simulation results showed that all electrical parameters are greatly affected by the absorber thickness (w) below 1000 nm, due to the increase of back-contact recombination and very poor absorption. Increasing hole density (p) or absorber band gap (Eg) improvesVocand leads to high efficiency, which equals value of 16.1% whenp= 1016 cm−3andEg=1.2 eV. In order to reduce back-contact recombination, the effect of a very thin layer with high band gap inserted near the back contact and acting as electrons reflector, the so-called back-electron reflector (EBR), has been investigated. The performances of the solar cells are significantly improved, when ultrathin absorbers (w< 500 nm) are used; the corresponding gain ofJscdue to the EBR is 3 mA/cm2. Our results are in good agreement with those reported in the literature from experiments.

Monolithic hybrid tandem solar cells comprising copper indium gallium diselenide and organic subcells

2013 ◽  
Vol 103 (14) ◽  
pp. 143904 ◽  
Author(s):  
Manuel Reinhard ◽  
Paul Sonntag ◽  
Ralph Eckstein ◽  
Linda Bürkert ◽  
Andreas Bauer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Tandem Solar Cells ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

High-efficiency, Cd-free copper–indium–gallium–diselenide/polymer hybrid solar cells

2007 ◽  
Vol 91 (9) ◽  
pp. 807-812 ◽  
Author(s):  
Vignesh Gowrishankar ◽  
Christine K. Luscombe ◽  
Michael D. McGehee ◽  
Jean M.J. Fréchet
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Hybrid Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Polymer Hybrid ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium
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