Electronic properties of Cu(In,Ga)Se2 solar cells on stainless steel foils without diffusion barrier

2012 ◽  
Vol 20 (3) ◽  
pp. 253-259 ◽  
Author(s):  
F. Pianezzi ◽  
A. Chirilă ◽  
P. Blösch ◽  
S. Seyrling ◽  
S. Buecheler ◽  
...  
2013 ◽  
Vol 113 (5) ◽  
pp. 054506 ◽  
Author(s):  
P. Blösch ◽  
F. Pianezzi ◽  
A. Chirilă ◽  
P. Rossbach ◽  
S. Nishiwaki ◽  
...  

Solar Energy ◽  
2013 ◽  
Vol 92 ◽  
pp. 189-195 ◽  
Author(s):  
W. Thongkham ◽  
A. Pankiew ◽  
K. Yoodee ◽  
S. Chatraphorn

2003 ◽  
Vol 93 ◽  
pp. 127-132 ◽  
Author(s):  
Takuya Satoh ◽  
Yasuhiro Hashimoto ◽  
Shin-ichi Shimakawa ◽  
Takayuki Negami

2011 ◽  
Vol 1 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Patrick Blösch ◽  
Adrian Chirilă ◽  
Fabian Pianezzi ◽  
Sieghard Seyrling ◽  
Peggy Rossbach ◽  
...  

Metals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 38
Author(s):  
Matthias Weiss ◽  
Peng Zhang ◽  
Michael P. Pereira ◽  
Bernard F. Rolfe ◽  
Daniel E. Wilkosz ◽  
...  

This study investigates the effect of grain size and composition on the material properties and forming limits of commercially supplied stainless steel foil for bipolar plate manufacture via tensile, stretch forming and micro-stamping trials. It is shown that in commercially supplied stainless steel the grain size can vary significantly and that ‘size effects’ can be influenced by prior steel processing and composition effects. While the forming limits in micro-stamping appear to be directly linked to the plane strain forming limits of the individual stainless steel alloys, there was a clear effect of the tensile anisotropy. In contrast to previous studies, forming severity and the likelihood of material failure did not increase with a decreasing channel profile radius. This was related to inaccuracies of the forming tool profile shape.


1996 ◽  
Vol 424 ◽  
Author(s):  
S. D. Theiss ◽  
S. Wagner

AbstractWe describe the successful fabrication of device-quality a-Si:H thin-film transistors (TFTs) on stainless-steel foil substrates. These TFTs demonstrate that transistor circuits can be made on a flexible, non-breakable substrate. Such circuits could be used in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.Two inverted TFT structures have been made, using 200 gim thick stainless steel foils with polished surfaces. In the first structure we used the substrate as the gate and utilized a homemade mask set with very large feature sizes: L = 45 μm; W = 2.5 mm. The second, inverted staggered, structure used a 9500 Å a-SiNx:H passivating/insulating layer deposited on the steel to enable the use of isolated gates. For this structure we used a mask set which is composed of TFTs with much smaller feature sizes. Both TFT structures exhibit transistor action. Current-voltage characterization of the TFTs with the inverted staggered structure shows typical on/off current ratios of 107, leakage currents on the order of 10-12 A, good linear and saturation current behavior, and channel mobilities of 0.5 cm2/V·sec. These characteristics clearly identify the TFTs grown on stainless steel foil as being of device quality.


Solar Energy ◽  
2021 ◽  
Vol 230 ◽  
pp. 1033-1039
Author(s):  
Chen Zhang ◽  
Tongqing Qi ◽  
Wei Wang ◽  
Chenchen Zhao ◽  
Shuda Xu ◽  
...  

2022 ◽  
Vol 148 ◽  
pp. 107737
Author(s):  
Hamed Sheikhbahaee ◽  
S. Javid Mirahmadi ◽  
Mohammad Reza Pakmanesh ◽  
Saeed Asghari

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