scholarly journals Material processing with fast rise and fall time CO 2 laser pulses

2021 ◽  
Author(s):  
Patrick Kim
Keyword(s):  
Material Processing ◽  
Laser Pulses ◽  
Fall Time ◽  
Fast Rise

Far-field and near-field material processing with. femtosecond laser pulses

1999 ◽  
Vol 69 (7) ◽  
pp. S7-S11 ◽  
Author(s):  
F. Korte ◽  
S. Nolte ◽  
B.N. Chichkov ◽  
T. Bauer ◽  
G. Kamlage ◽  
...  
Keyword(s):  
Material Processing ◽  
Femtosecond Laser ◽  
Near Field ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Far Field

Material processing with 12 femtosecond picojoule laser pulses

2012 ◽  
Author(s):  
Karsten König ◽  
Martin Licht ◽  
Martin Straub ◽  
Aisada Uchugonova
Keyword(s):  
Material Processing ◽  
Laser Pulses

Material processing with shaped femtosecond laser pulses

2012 ◽  
Vol 57 (SI-1 Track-S) ◽  
Author(s):  
C. Schuster ◽  
N. Rothe ◽  
A. V. Svanidze ◽  
S. Fiedler ◽  
R. Irsig ◽  
...  
Keyword(s):  
Material Processing ◽  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

Sub-100nm material processing with sub-15 femtosecond picojoule near infrared laser pulses

2011 ◽  
Author(s):  
Karsten König ◽  
Aisada Uchugonova ◽  
Martin Straub ◽  
Huijing Zhang ◽  
Maziar Afshar ◽  
...  
Keyword(s):  
Material Processing ◽  
Near Infrared ◽  
Laser Pulses ◽  
Infrared Laser

ZnO-Sn Bilayer Ultraviolet (UV) Photon Detector with Improved Responsitivity

2006 ◽  
Vol 957 ◽  
Author(s):  
Harish Kumar Yadav ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Metal Layer ◽  
Surface States ◽  
Zno Thin Film ◽  
Photon Detector ◽  
Fall Time ◽  
Uv Illumination ◽  
Fast Rise

ABSTRACTThe influence of the integration of ultra-thin layer of different metals (Al, Cu, Sn, Te, Pb and Au) with the c-axis oriented ZnO thin film on the ultraviolet (UV) photoresponse is investigated. The transfer of electrons from the metal layer to the semiconductor at the interface compensate the surface states which otherwise takes electrons from the interior of ZnO layer and thereby increases the conductivity under UV illumination. The Sn/ZnO sample exhibits a responsivity of the order of 8.5 KV/W at a low UV intensity of 140 μW/cm2 (⎻ = 365 nm) with a fast rise and fall time of 105 and 400 ms respectively.

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